Patents by Inventor Gerrit Verspui

Gerrit Verspui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5217817
    Abstract: A steel substrate is provided with an aluminum intermediate layer and a boron layer. The aluminum intermediate layer provides a substantially improved adhesion of the boron layer. The boron layer is provided by a low-temperature CVD process.
    Type: Grant
    Filed: June 11, 1992
    Date of Patent: June 8, 1993
    Assignee: U.S. Philips Corporation
    Inventors: Gerrit Verspui, Jacobus M. M. Verheijen, Andre Sikkema
  • Patent number: 5213599
    Abstract: In the manufacture of tube glass, in which following the drawing of a tube from molten glass the inside surface of the tube is treated with a chemically reactive gas or gas mixture, a gas or gas mixture which is not reactive at the drawing temperature of the glass is dispensed into the tube in the direction of drawing. At a location in the tube where the tube has cooled down so far that the diameter is constant, the gas or gas mixture is made to react by means of a plasma which is generated in the tube.
    Type: Grant
    Filed: February 19, 1992
    Date of Patent: May 25, 1993
    Assignee: U.S. Philips Corp.
    Inventors: Robert E. M. Geertman, Gerrit Verspui, Johannes A. G. P. Damsteegt
  • Patent number: 5164230
    Abstract: A steel substrate is provided first with an aluminum intermediate layer and then, by a CVD process, with an outer layer of boron.
    Type: Grant
    Filed: November 7, 1990
    Date of Patent: November 17, 1992
    Assignee: U.S. Philips Corporation
    Inventors: Gerrit Verspui, Jacobus M. M. Verheijen, Andre Sikkema
  • Patent number: 5046849
    Abstract: A device for the continuous measurement of the thickness of layers which are deposited on a substrate at low pressure, comprising a light source and two light conductors. Both light conductors are present in a pipe closed at one end by an optical window. Said end has an exchangeable sleeve which at one end comprises an optical window and which can be slid so as to fit the pipe in which the light conductors are present.
    Type: Grant
    Filed: June 28, 1990
    Date of Patent: September 10, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Petrus J. W. Severin, Gerrit Verspui
  • Patent number: 4208449
    Abstract: A method of making an electric resistor having a negative temperature coefficient of resistance whose resistance body consists of p-type doped pyrolytic polycrystalline cubic silicon carbide.
    Type: Grant
    Filed: February 23, 1978
    Date of Patent: June 17, 1980
    Assignee: U.S. Philips Corporation
    Inventors: Wilhelmus F. Knippenberg, Gerrit Verspui, Siegfried H. Hagen
  • Patent number: 4176336
    Abstract: A lacquer-encapsulated carbon film resistor having a ceramic substrate coated with a carbon film, a silicon nitride layer, an organic lacquer layer and termination electrodes.
    Type: Grant
    Filed: June 7, 1978
    Date of Patent: November 27, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Peter J. T. Van Den Berk, Gerrit Verspui
  • Patent number: 4136006
    Abstract: An electrode for the electrochemical machining of electrically conductive workpieces, which electrode has a layer of polycrystalline silicon carbide via an insulator layer which is at most 0.5 .mu.m thick.
    Type: Grant
    Filed: October 13, 1977
    Date of Patent: January 23, 1979
    Assignee: U.S. Philips Corporation
    Inventor: Gerrit Verspui
  • Patent number: 4128842
    Abstract: In order to increase recording quality the electrode pin of a device for electrostatically printing characters consists of a whisker which is mounted to be electrically conductive in a metal holder. A whisker is by definition a monocrystalline member.
    Type: Grant
    Filed: September 14, 1976
    Date of Patent: December 5, 1978
    Assignee: U.S. Philips Corporation
    Inventors: Ulf Rothgordt, HansDieter Hinz, Gerrit Verspui
  • Patent number: 4086559
    Abstract: An electric resistor having a negative temperature coefficient of the electrical resistance whose resistance body consists of p-type doped pyrolytic polycrystalline cubic silicon carbide.
    Type: Grant
    Filed: September 22, 1975
    Date of Patent: April 25, 1978
    Assignee: U.S. Philips Corporation
    Inventors: Wilhelmus Franciscus Knippenberg, Gerrit Verspui, Siegfried Hendrik Hagen
  • Patent number: 4013503
    Abstract: A method of growing silicon carbide whiskers from a gaseous phase by means of a vapor-liquid-solid mechanism on a substrate using iron in a finely divided state as a solvent for the silicon carbide.
    Type: Grant
    Filed: July 25, 1975
    Date of Patent: March 22, 1977
    Assignee: North American Philips Corporation
    Inventors: Wilhelmus Franciscus Knippenberg, Gerrit Verspui
  • Patent number: 3972797
    Abstract: Electrode for electrochemically machining electrically conducting workpieces, in particular machining them by removal of material, which electrode is locally coated with a screening layer consisting of a polycristalline semiconductor material, which layer preferably comprises two component layers of p and n-conductivity type respectively.
    Type: Grant
    Filed: December 6, 1974
    Date of Patent: August 3, 1976
    Assignee: U.S. Philips Corporation
    Inventors: Siegfried Hendrik Hagen, Cornelis VAN Osenbruggen, Herman Anton, Joseph Reemers, Gerrit Verspui
  • Patent number: 3962406
    Abstract: A method of manufacturing silicon carbide crystals in which a core of silicon dioxide is embedded in a mass of granular silicon carbide, or materials which form silicon carbide on heating this mass being heated to a temperature at which silicon dioxide volatilizes, i.e. above about 1500.degree.C, and the silicon carbide coheres. This leaves a cavity, formerly occupied by the silicon dioxide which is surrounded by silicon carbide. Heating is then continued at a temperature, above about 2500.degree.C, at which silicon carbide crystals are formed on the walls of the cavity.
    Type: Grant
    Filed: August 15, 1972
    Date of Patent: June 8, 1976
    Assignee: U.S. Philips Corporation
    Inventors: Wilhelmus Franciscus Knippenberg, Gerrit Verspui