Abstract: Auxiliary electrodes for creating drag fields may be provided as arrays of finger electrodes on thin substrates such as printed circuit board material for insertion between main RF electrodes of a multipole. A progressive range of voltages can be applied along lengths of the auxiliary electrodes by implementing a voltage divider that utilizes static resisters interconnecting individual finger electrodes of the arrays. Dynamic voltage variations may be applied to individual finger electrodes or to groups of the finger electrodes.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: Methods and apparatus for inspecting tubes or pipes preferably includes at least one sealed inspection pig having a length to diameter relationship based on a known bend radius of a tube or pipe to be inspected. A plurality of such pigs may be used where such pigs are interconnected, sealed, and releasable by design and where an inspection transducer is located approximately centrally between the ends of at least one of the pigs.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

Abstract: An apparatus that comprises material which have different thermal expansion coefficients, combined in such a way that the length of the drift region is variant, and self adjusting with temperature. The adjustment is such as to compensate for the length changes resulting from thermal expansion or contraction in other ion optical elements, such that ions of substantially equivalent mass to charge ratios maintain a constant flight time though the system. This allows for use of standard construction methods for the ion optical elements.

Abstract: An apparatus that comprises material which have different thermal expansion coefficients, combined in such a way that the length of the drift region is variant, and self adjusting with temperature. The adjustment is such as to compensate for the length changes resulting from thermal expansion or contraction in other ion optical elements, such that ions of substantially equivalent mass to charge ratios maintain a constant flight time though the system. This allows for use of standard construction methods for the ion optical elements.

Abstract: A portable apparatus for sanitizing and recovering mail and other materials is disclosed. The apparatus is employed after a known or suspected biological attack or contamination event, such as anthrax. Multiple X-ray sources penetrate mail and other materials, and destroy the biological agents. The apparatus is taken to the location of the biological problem, as opposed to shipping contaminated materials to a fixed facility for recovery. Many safety and practical advantages result from this approach to bio-terrorism or to biological contamination events. The design of this apparatus leads to a self-cleaning feature. Airflow control prevents escape of toxic biological materials into the environment.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: A portable apparatus for sanitizing and recovering mail and other materials is disclosed. The apparatus is employed after a known or suspected biological attack or contamination event, such as anthrax. Multiple X-ray sources penetrate mail and other materials, and destroy the biological agents. The apparatus is taken to the location of the biological problem, as opposed to shipping contaminated materials to a fixed facility for recovery. Many safety and practical advantages result from this approach to bio-terrorism or to biological contamination events. The design of this apparatus leads to a self-cleaning feature. Airflow control prevents escape of toxic biological materials into the environment.

Abstract: The present invention is directed to a system and method for tuning an optical fiber Bragg grating by using a circular mechanism which uniformly stretches the fiber along its length while at the same time preserving the minimal size for stretching.

Abstract: The present invention is directed to a system and method for tuning an optical fiber Bagg grating by using a cicular mechanism which uniformly stretches the fiber along its length while at the same time preserving the minimal size for stretching.

Abstract: Temperature compensated fiber stretching is accomplished by amplifying with a unique flexure the relative displacement between a rigid frame and a longitudinal spacing element. For passive compensation, relative displacement results from differential thermal expansion between the frame and the longitudinal spacer. For active thermal compensation and/or for wavelength tuning of an embedded fiber Bragg grating, relative displacement results from combining differential thermal expansion with active feedback length control of the longitudinal spacer. The feedback control can stabilize using length feedback from a displacement sensor or actively control length using temperature feedback, including logic elements, for example algorithms or look up tables. In an optical system, combined passive compensation and active control with flexure amplification provide superior thermal wavelength stability and tuning range.