Abstract: An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured.

Abstract: Monolithic integrated optical semiconductor components with a buried ridge stripe waveguide (BRS) are used for optical communications. They contain active (AB) and passive (PB) waveguide regions. High absorption losses occur in passive waveguide regions with a buried ridge stripe waveguide, while passive waveguide regions with low-loss rib waveguides have reflections and leakage losses in the junction with the active waveguide regions. A semiconductor component (BE2) according to the invention has a buried ridge stripe waveguide (BRS) in active (AB) as well as passive (PB) waveguide regions, which is covered by a cap layer (DS). In addition the passive regions (PB) have a semi-insulating or undoped cladding layer (MS) between the ridge stripe waveguide (BRS) and the cap layer (DS). A process is furthermore indicated whereby a semiconductor component according to the invention can be manufactured.

Abstract: A semiconductor device is operated as an optical filter. The semiconductor device has a substrate and a monolithically integrated branched waveguide structure disposed above the substrate, portions of the waveguide structure being divided into a plurality of regions by troughs, one of the regions being a branching region. Light is radiated into the waveguide structure at an end face of one of the regions and currents that are smaller than respective laser threshold currents of the regions flow through the regions, including the branching region, perpendicular to a propagation direction of light through the waveguide.

Abstract: A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.

Abstract: A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current is related to the reciprocal of the round-trip time or an integral multiple of this reciprocal of light pulses generated by the alternating current in the semiconductor laser.

Abstract: An optical device includes a semiconductor laser monolithically integrated on a substrate having a branched cavity extending above a plane that is coplanar with a base surface of the substrate, and an adjustable optical power light source for radiating light into the cavity of the semiconductor laser thereby controlling the operation of the semiconductor laser optically.