Patents by Inventor Gert Strauch

Gert Strauch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for semiconductor crystal production with temperature management
    Patent number: 7135073
    Abstract: What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: November 14, 2006
    Assignee: Aixtron AG
    Inventors: Michael Heuken, Gert Strauch, Harry Protzmann, Holger Jürgensen, Oliver Schön, Dietmar Schmitz
  • Method and system for semiconductor crystal production with temperature management
    Publication number: 20020001953
    Abstract: What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.
    Type: Application
    Filed: June 1, 2001
    Publication date: January 3, 2002
    Inventors: Michael Heuken, Gert Strauch, Harry Protzmann, Holger Jurgensen, Oliver Schon, Dietmar Schmitz
  • Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gases
    Publication number: 20010014397
    Abstract: What is described here is a method of producing a wafer support having a protective layer, which, after the specifically mechanically prefabricated wafer support has been cleaned, is characterized by heating the cleaned wafer support to temperatures, by introducing coating components for conversion of the wafer support surface into the protective layer or for deposition of components supplied to a protective layer.
    Type: Application
    Filed: December 28, 2000
    Publication date: August 16, 2001
    Inventors: Dietmar Schmitz, Johannes Kaeppeler, Gert Strauch, Holger Jurgensen, Michael Heuken