Patents by Inventor Gertjan van Sprakelaar

Gertjan van Sprakelaar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11268839
    Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.
    Type: Grant
    Filed: January 5, 2020
    Date of Patent: March 8, 2022
    Assignee: MEASUREMENT SPECIALTIES, INC.
    Inventors: Omar Abed, Gertjan van Sprakelaar, Justin Gaynor
  • Patent number: 11060929
    Abstract: Pressure sensor systems and methods of assembling pressure sensor systems that reduce the need for accurate placement of a pressure sensor die in a pressure sensor package, reduce leakage in pressure sensor systems, and provides a consistent attachment of a pressure sensor die to a package.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: July 13, 2021
    Assignee: SILICON MICROSTRUCTURES, INC.
    Inventors: Keyanoush Razavidinani, Gertjan van Sprakelaar, Chris Wagner
  • Publication number: 20200284668
    Abstract: Pressure sensor systems and methods of assembling pressure sensor systems that reduce the need for accurate placement of a pressure sensor die in a pressure sensor package, reduce leakage in pressure sensor systems, and provides a consistent attachment of a pressure sensor die to a package.
    Type: Application
    Filed: December 20, 2019
    Publication date: September 10, 2020
    Applicant: Silicon Microstructures, Inc.
    Inventors: Keyanoush Razavidinani, Gertjan van Sprakelaar, Chris Wagner
  • Publication number: 20200284632
    Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.
    Type: Application
    Filed: January 5, 2020
    Publication date: September 10, 2020
    Applicant: Silicon Microstructures, Inc.
    Inventors: Omar Abed, Gertjan van Sprakelaar, Justin Gaynor
  • Patent number: 7795974
    Abstract: A digitally variable gain amplifier comprising a front-end stage, a level shifter stage, and an output amplifier stage. The front-end stage comprises a high gain pre-amplifier and a low gain pre-amplifier driven in parallel by a differential input signal. A coarse gain control is realized by enabling only one pre-amplifiers at a time, while the differential input signal remains connected to the inputs of the disabled pre-amplifier. An attenuator following each pre-amplifier provides fine gain control. The enabled pre-amplifier amplifies the differential input signal and outputs a first dc voltage level. The disabled pre-amplifier is placed into a standby ready mode and outputs a second dc voltage level that is greater in magnitude than the first dc voltage level. The level shifter stage performs a minimum voltage selection operation to automatically select and level shift the amplified differential input signal, and further pass the signal to the output amplifier stage.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: September 14, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Michael X. Maida, Gertjan Van Sprakelaar
  • Patent number: 7791414
    Abstract: An embodiment of the present invention is directed to a current feedback amplifier. The amplifier is coupleable with a first supply rail and a second supply rail. The current feedback amplifier includes an input stage configurable to provide a first input and a second input for the current feedback amplifier, wherein the first and second inputs are operable to receive input voltages within 800 mV of the first supply rail or the second supply rail. The amplifier further includes a first current mirror coupled with the input stage, a second current mirror coupled with the input stage, and an output stage coupled with the first and second current mirrors. The output stage is operable to provide an output for the current feedback amplifier.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: September 7, 2010
    Assignee: National Semiconductor Corporation
    Inventor: Gertjan van Sprakelaar
  • Publication number: 20090267692
    Abstract: A digitally variable gain amplifier comprising a front-end stage, a level shifter stage, and an output amplifier stage. The front-end stage comprises a high gain pre-amplifier and a low gain pre-amplifier driven in parallel by a differential input signal. A coarse gain control is realized by enabling only one pre-amplifiers at a time, while the differential input signal remains connected to the inputs of the disabled pre-amplifier. An attenuator following each pre-amplifier provides fine gain control. The enabled pre-amplifier amplifies the differential input signal and outputs a first dc voltage level. The disabled pre-amplifier is placed into a standby ready mode and outputs a second dc voltage level that is greater in magnitude than the first dc voltage level. The level shifter stage performs a minimum voltage selection operation to automatically select and level shift the amplified differential input signal, and further pass the signal to the output amplifier stage.
    Type: Application
    Filed: April 24, 2009
    Publication date: October 29, 2009
    Applicant: National Semiconductor Corporation
    Inventors: Michael X. Maida, Gertjan Van Sprakelaar
  • Patent number: 6629465
    Abstract: A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: October 7, 2003
    Assignee: NovaSensor Inc.
    Inventors: Nadim I. Maluf, John R. Logan, Gertjan van Sprakelaar
  • Patent number: 6038928
    Abstract: A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway.
    Type: Grant
    Filed: October 6, 1997
    Date of Patent: March 21, 2000
    Assignee: Lucas Novasensor
    Inventors: Nadim I. Maluf, John R. Logan, Gertjan van Sprakelaar