Patents by Inventor Gervaise Vilain

Gervaise Vilain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making a diffraction lattice on a semiconductor material
    Patent number: 5033816
    Abstract: The method consists of the following successive steps: the deposition on a substrate, by epitaxy, of an optical confinement layer, formed by a first semiconducting material; the deposition, by epitaxy of an active layer, formed by a second semiconducting material; the deposition, by epitaxy, of a stop layer, formed by a third semiconducting material, with a thickness of between 0.005 and 0.02 microns; the deposition, by epitaxy, of a guide layer, formed by a fourth semiconducting material, with a thickness of between 0.01 and 0.
    Type: Grant
    Filed: December 15, 1988
    Date of Patent: July 23, 1991
    Assignee: Thomson-CSF
    Inventors: Robert Blondeau, Daniel Rondi, Anne Taineau, Gervaise Vilain, Baudouin de Cremoux