Abstract: An electronic device (100) includes a first plane (102) and a second plane (103) where one of the planes can be deformed under mechanical pressure. A common contact region forms a cavity (145) on at least one of the first and second planes. An electrical connection (110) is configured to complete an electrical connection between the first and second planes wherein the electrical connection includes a solidified form of a liquid conductor dispensed in the cavity to complete an electrical path between the first and second planes.

Abstract: An over voltage protection device on a radio frequency identification tag or in a radio frequency receiver comprises electro-magnetic coupling means between a base station and the radio frequency identification tag or radio frequency receiver. At least one ferroelectric capacitor is electrically connected to the coupling means. As long as the voltage across the ferroelectric capacitor remains below its coercive voltage, its capacitance will be linear and the tag or radio frequency receiver will behave normally. However, if the voltage across the ferroelectric capacitor exceeds the coercive voltage, the ferroelectric capacitance will experience polarization reversal and exhibit its non-linear and dissipative behavior. Connecting the ferroelectric capacitor in suitable ways to the coupling means, will result in a dumping of the voltage transferred to the electronics present on the tag or radio frequency receiver. This electronics is then protected against excessive voltages that could cause it damage.

Abstract: A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.

Abstract: A device such as a flexible LCD is described comprising first and second layers wherein the first layer is a flexible substrate and the second layer is a brittle ITO conduction line applied to the substrate. The ITO layer is substantially flat and meanders across the plane of the flexible substrate so as to prevent fracture of the ITO layer when the flexible substrate is deformed. The ITO layer may be subdivided into portions, the length of the portions being selected to prevent fracture when the flexible substrate is deformed to a predetermined radius of curvature.

Abstract: The invention relates to a structure for a semiconductor arrangement. A resist structure for supporting deposition of a solution containing a semiconductor is directly or through intervening layers coupled to a substrate. The resist structure comprises a depression (301) for depositing of the solution containing the semiconductor (309) and a trough (305) aligning at least part of an edge of the depression (309) and separated from the depression (309) by a protrusion (307). The trough (305) preferably surrounds the depression (309). The trough provides a pinning effect on the solution containing the semiconductor thereby improving the wettability and accordingly allowing for increased volume of semiconductor to be applied to a given area.

Abstract: A (display) device (31,4,5) contains multiple panels (3,7) like e.g. displays. Every display can be used to display its own content and can be rolled out of a sub-housing (5) like e.g. a cartridge separately. In different configurations the same cartridge can be arranged in such a way that the panels are used for a separate functionality or multiple display panels form one big screen.

Abstract: An electrical element, such as a thin-film transistor, is defined on a flexible substrate, in that the substrate is attached to a carrier by an adhesive layer, and is delaminated after definition of the transistor. This is for instance due to illumination by UV-radiation. An opaque coating is provided to protect any semiconductor material. A heat treatment is preferably given before application of the layers of the transistor to reduce stress in the adhesive layer.

Abstract: A matrix array display device (100) is mounted on a flexible substrate (110) such as a polyimide substrate, and has a plurality of first conductors (120) crossing a plurality of second conductors (130), with a plurality of pixels (140) being located in the vicinity of a crossing between a first conductor (120) and a second conductor (130). The display device (100) includes a flexible shift register (150) and an optional further flexible shift register (160) for addressing the first conductors (120). The flexible shift register (150), which preferably is realized using organic semiconductor materials, occupies a smaller area of the flexible substrate (110) than for instance a bus structure, thus increasing the effective display area of the display device (100).

Abstract: A display system is provided with means to determine (14,15) and to display a remaining lifetime or other physical properties of a display device of said display system to signal the need for replacement.