Abstract: Disclosed are systems and techniques to improve coherence of qubits experiencing fluctuating electric potential caused by the environment. In some implementations, a processing device implementing the disclosed techniques includes a first (second) qubit structure formed using a first (second) set of electrodes electrostatically confining a first (second) electron in a direction lateral to a film, the film including a condensed phase of one or more inert gas elements. The processing device further includes a feedback circuitry to subject the first qubit structure to a probe signal, receive a response signal caused by an interaction of the probe signal with the first qubit structure, generate, using the response signal, a correction signal, and subject the first qubit structure and the second qubit structure to the correction signal.

Abstract: Qubit devices require fast operation, long coherence, and large scalability to be viable for implementation in quantum computing systems. A qubit platform device having long coherence, scalability, and fast operation includes a substrate, or trap region, configured to structurally support solid neon thereon. A trap electrode is configured to provide a trap voltage to the trap region and which creates a confining electrical field to a confining region adjacent to the trap region. The confining region being a region of space to confine an electron therein, confining the electron against the solid neon. First and second sets of guard electrodes are configured to provide variable electric potentials to first and second guard regions to allow for trapping and manipulation of a single electron in the confining region.

Abstract: Qubit devices require fast operation, long coherence, and large scalability to be viable for implementation in quantum computing systems. A qubit platform device having long coherence, scalability, and fast operation includes a substrate, or trap region, configured to structurally support solid neon thereon. A trap electrode is configured to provide a trap voltage to the trap region and which creates a confining electrical field to a confining region adjacent to the trap region. The confining region being a region of space to confine an electron therein, confining the electron against the solid neon. First and second sets of guard electrodes are configured to provide variable electric potentials to first and second guard regions to allow for trapping and manipulation of a single electron in the confining region.