Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

Abstract: An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.

Abstract: An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.

Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.