Abstract: Embodiments of the present disclosure relate to a memory system, a memory controller and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may receive, from an outside of the memory system, a read command, execute a defense code on the data when a failure occurs during an operation of reading data from the memory device in response to the read command, and transmit defense code information, which is information related to the execution of the defense code for data, to the outside of the memory system.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may include a memory device having a plurality of memory blocks configured to store data; and a memory controller configured to: store the data in a first memory block group including N memory blocks among the plurality of memory blocks, set the data stored in the first memory block group to a read-only state, and migrate, after a threshold time has elapsed from a reference time, a target data which is all or part of the data stored in the first memory block group, to a second memory block group including M memory blocks among the plurality of memory blocks.

Abstract: Embodiments of the present disclosure relate to a memory system, a memory controller and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may receive, from an outside of the memory system, a read command, execute a defense code on the data when a failure occurs during an operation of reading data from the memory device in response to the read command, and transmit defense code information, which is information related to the execution of the defense code for data, to the outside of the memory system.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may include a memory device having a plurality of memory blocks configured to store data; and a memory controller configured to: store the data in a first memory block group including N memory blocks among the plurality of memory blocks, set the data stored in the first memory block group to a read-only state, and migrate, after a threshold time has elapsed from a reference time, a target data which is all or part of the data stored in the first memory block group, to a second memory block group including M memory blocks among the plurality of memory blocks.

Abstract: A memory system may include: a memory device including a plurality of memory blocks which includes memory cells supporting a two-or-more-level cell (XLC) mode and a single level cell (SLC) mode; and a controller suitable for managing data of the memory device and controlling the memory device, wherein, when memory usage of the memory device is greater than or equal to a first threshold value, the controller selects one or more free memory blocks as one or more victim memory blocks, switches a mode of each victim memory block to the XLC mode, and moves data stored in a source memory block to the one or more victim memory blocks, wherein the source memory block, among the plurality of memory blocks, has data stored therein driven in the SLC mode.

Abstract: Circuit designs and operating techniques for a storage device that includes, in one implementation, a memory device including a plurality of memory blocks, each memory block including a plurality of memory cells coupled to a plurality of corresponding word lines; and a memory controller configured to store data in memory cells included in a main area coupled to a selected word line of the plurality of word lines, and store word-line information in a spare area coupled to the selected word line to indicate that a program operation has been performed on the main area.

Abstract: A controller controls a semiconductor memory device including a plurality of memory blocks. The controller may include a controller control unit and a storing unit. The controller control unit compares the number of times of a read of an original memory block among the plurality of memory blocks with a predetermined copy generation reference value, determines whether to generate copy data of original data stored in the original memory block, and generates a command corresponding to the determination. The storage unit stores the copy generation reference value and address information about the original memory block.

Abstract: A memory system may include: a memory device including a plurality of memory blocks which includes memory cells supporting a two-or-more-level cell (XLC) mode and a single level cell (SLC) mode; and a controller suitable for managing data of the memory device and controlling the memory device, wherein, when memory usage of the memory device is greater than or equal to a first threshold value, the controller selects one or more free memory blocks as one or more victim memory blocks, switches a mode of each victim memory block to the XLC mode, and moves data stored in a source memory block to the one or more victim memory blocks, wherein the source memory block, among the plurality of memory blocks, has data stored therein driven in the SLC mode.

Abstract: Circuit designs and operating techniques for a storage device that includes, in one implementation, a memory device a plurality of memory blocks, each memory block including a plurality of memory cells coupled to a plurality of corresponding word lines; and a memory controller configured to store data in memory cells included in a main area coupled to a selected word line of the plurality of word lines, and store word-line information in a spare area coupled to the selected word line to indicate that a program operation has been performed on the main area.

Abstract: A controller controls a semiconductor memory device including a plurality of memory blocks. The controller may include a controller control unit and a storing unit. The controller control unit compares the number of times of a read of an original memory block among the plurality of memory blocks with a predetermined copy generation reference value, determines whether to generate copy data of original data stored in the original memory block, and generates a command corresponding to the determination. The storage unit stores the copy generation reference value and address information about the original memory block.