Patents by Inventor Geumjoo Ra

Geumjoo Ra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
    Patent number: 7511287
    Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: March 31, 2009
    Assignee: Axcelis Technologies, Inc.
    Inventors: Ronald N. Reece, Serguei I. Kondratenko, Geumjoo Ra, Louis P. Wainwright, Gary N. Cai
  • Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
    Publication number: 20070075274
    Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.
    Type: Application
    Filed: November 14, 2005
    Publication date: April 5, 2007
    Inventors: Ronald Reece, Serguei Kondratenko, Geumjoo Ra, Louis Wainwright, Gary Cai