Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Abstract: A waste wood sleeper pyrolysis apparatus of a hybrid heating type includes a plurality of reactor containers arranged side by side, each having a space in which a waste wood sleeper is placed, a movement rail arranged parallel to an end of one side and an end of the other side of each of the plurality of reactor containers, and a microwave applicator coupled to the movement rail and including a plurality of microwave generators that move to upper portions of the plurality of reactor containers to transmit microwaves into the plurality of reactor containers.

Abstract: An electronic device, including an array substrate, a pad portion disposed on the array substrate, and an integrated circuit disposed on the pad portion and comprising a bump portion. The pad portion includes a first sub-pad unit including a first pad having an inclined shape and a second sub-pad unit including a second pad having an inclined shape. The first pad and the second pad are symmetrically arranged with respect to an imaginary line that divides the pad portion. The pad portion is electrically connected with the bump portion.

Abstract: Disclosed is a single process for producing hydrogen, carbon monoxide, and carbon from methane by forming gas products comprising hydrogen and carbon monoxide, and solid products comprising carbon and an iron-based catalyst from methane in a methane-containing feedstock through pyrolysis route involving auto-thermal reduction in a rotary kiln-type reactor in the presence of an iron-based catalyst and separating and recovering respective products.

Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.

Abstract: According to one embodiment, disclosed are a DC-DC converter for preventing the unnecessary consumption of a battery in a solar power-linked energy storage system, and a control method thereof. Particularly, a sensing switch is controlled according to a current mode, and thus unnecessary power consumption can be prevented. In addition, a method for operating a circuit breaker, related thereto, is disclosed.

Abstract: Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.

Abstract: A display device includes a data conductive layer including a first power line, a passivation layer with a first opening exposing the first power line, a via layer with a second opening partially overlapping the first opening, a pixel electrode on the via layer, a connection electrode in the first and second openings, a pixel-defining film with an opening overlapping the second opening, a light-emitting layer on the pixel-defining film, the pixel electrode and the connection electrode, and a common electrode connected to the first power line. The data conductive layer includes a data base layer, a data main metal layer, and a data capping layer, the first power line includes a wire connection structure, in which the data main metal layer is recessed from sides of the data capping layer, and the common electrode is connected to the data main metal layer in the wire connection structure.

Abstract: A transistor array substrate includes a substrate, an active layer disposed on the substrate and including a channel region, a source region and a drain region, a gate insulating layer disposed on a part of the active layer, a gate electrode overlapping the channel region of the active layer and included in an electrode conductive layer which is disposed on the gate insulating layer, a source electrode included in the electrode conductive layer and in contact with a part of the source region of the active layer, and a drain electrode included in the electrode conductive layer and in contact with a part of the drain region of the active layer. The active layer includes an oxide semiconductor including crystals and is disposed as an island shape excluding a hole in a plan view.

Abstract: The present invention relates to a flexible electrode material and a preparation method therefor. An aspect of the present invention provides a flexible electrode material comprising a graphene film and a free-standing metal oxide formed on the graphene film.

Abstract: A display device includes a substrate, a via layer above the substrate, and including a protrusion, an insulating pattern above the protrusion, and having a width that is greater than a width of the protrusion, first and second electrodes above the via layer, and spaced apart from each other with the protrusion and the insulating pattern therebetween, a first insulating layer above the protrusion, the insulating pattern, the first electrode, and the second electrode, a light-emitting element above the first insulating layer, and between the first electrode and the second electrode, a first connection electrode connected to a first end of the light-emitting element, and a second connection electrode connected to a second end of the light-emitting element.

Abstract: A display device includes a substrate, conductive pads arranged on the substrate over a plurality of rows, and a drive circuit chip including bumps arranged over a plurality of rows to be electrically connected with the conductive pads, and the conductive pads arranged in a same row are arranged in parallel, and the bumps arranged in a same row are arranged in a zigzag form so as to be partially shifted.

Abstract: A display device includes a first display area including a plurality of first pixel electrodes, and a second display area including a plurality of second pixel electrodes. A first pitch in a first direction of the plurality of first pixel electrodes is smaller than a second pitch in the first direction of the plurality of second pixel electrodes, and a length in the first direction of the first pixel electrodes is smaller than a length in the first direction of the second pixel electrode.

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are an audio reproduction device and a method of controlling an operation thereof, which involve a user interface that allows a user to more effectively control various functions. The audio reproduction device includes a processor configured to obtain function information of the audio reproduction device corresponding to a user input received using mapping information for mapping between a user input received based on at least one of at least one wheel region rotatable clockwise or counterclockwise and at least one touch region and function information of the audio reproduction device, and to control the audio reproduction device according to the obtained function information of the audio reproduction device.

Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

Abstract: A display device includes a substrate, a plurality of pixel electrodes on the substrate and spaced apart from each other, a plurality of light-emitting elements on the plurality of pixel electrodes, respectively, and a common electrode layer on the plurality of light-emitting elements and to which a common voltage is applied. The plurality of light-emitting elements include a first light-emitting element that is configured to emit first light according to a first driving current and a second light-emitting element that is configured to emit second light according to a second driving current. An active layer of the first light-emitting element is the same as an active layer of the second light-emitting element.