Abstract: The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al2O3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

Abstract: The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al2O3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.