Abstract: An electronic device comprises a semiconductor memory that includes: a memory cell; a protective layer disposed along a profile of the memory cell; and a buffer layer interposed between at least a portion of a sidewall of the memory cell and the protective layer, wherein the buffer layer and the protective layer include silicon nitride, and wherein a density of the protective layer is greater than a density of the buffer layer.

Abstract: A semiconductor device may include: a first conductive line extending in a first direction; a second conductive line extending in a second direction intersecting the first direction; a memory cell located between the first conductive line and the second conductive line in a third direction that is intersecting to the first and second directions; and a liner pattern located over a sidewall of the memory cell and including a first portion and a second portion, the first portion including halide impurities at a first concentration, the second portion including halide impurities at a second concentration that is lower than the first concentration.

Abstract: An electronic device comprises a semiconductor memory that includes: a memory cell; a protective layer disposed along a profile of the memory cell; and a buffer layer interposed between at least a portion of a sidewall of the memory cell and the protective layer, wherein the buffer layer and the protective layer include silicon nitride, and wherein a density of the protective layer is greater than a density of the buffer layer.