Abstract: The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: one or more light emitting units, each including a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on a growth substrate; an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer; and one or more bonding layers for electrically connecting to the light emitting units and electrode unit, respectively, wherein each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate.

Abstract: The disclosure relates to a semiconductor light emitting device from which a growth substrate is removed, comprising: a semiconductor light emitting diode including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, in which the first semiconductor layer is formed in a direction where the growth substrate is removed; a metal layer formed on the second semiconductor layer; and an insulating layer for covering lateral faces of the semiconductor light emitting diode and lateral faces of the metal layer, and a manufacturing method for such a semiconductor light emitting device.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: The present disclosure relate to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a semiconductor light emitting chip, and first electrodes electrically connected to the semiconductor light emitting chip, with the first electrodes each having a planar area larger than that of the semiconductor light emitting chip, wherein lower surfaces of the first electrodes are exposed externally, and an insulating material is filled in-between inner lateral surfaces of the first electrodes.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 ?m or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to the plurality of semiconductor layers.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrod

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 ?m or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrod