Patents by Inventor GEUN-O JEONG

GEUN-O JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor manufacturing apparatus having an insulating plate
    Patent number: 11508557
    Abstract: A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: November 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Joo An, Jeon-Il Lee, Kaoru Yamamoto, Jang-Hee Lee, Kee-Young Jun, Geun-O Jeong
  • Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device
    Patent number: 11270881
    Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: March 8, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kaoru Yamamoto, Chang-Hyun Kim, Hyun-Jae Song, Keun-Wook Shin, Hyeon-Jin Shin, Sung-Joo An, Chang-Seok Lee, Kee-Young Jun, Geun-O Jeong, Jang-Hee Lee
  • Method of manufacturing metal hardmask and semiconductor device
    Patent number: 10790147
    Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-Hee Lee, Se-Ran Oh, Hyun-Su Kim, Ik-Soo Kim, Seong-Gil Park, Geun-O Jeong
  • PLASMA DEPOSITION METHOD, PLASMA DEPOSITION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200075324
    Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.
    Type: Application
    Filed: April 16, 2019
    Publication date: March 5, 2020
    Inventors: Kaoru YAMAMOTO, Chang-Hyun KIM, Hyun-Jae SONG, Keun-Wook SHIN, Hyeon-Jin SHIN, Sung-Joo AN, Chang-Seok LEE, Kee-Young JUN, Geun-O JEONG, Jang-Hee LEE
  • SEMICONDUCTOR MANUFACTURING APPARATUS HAVING AN INSULATING PLATE
    Publication number: 20200071822
    Abstract: A semiconductor manufacturing, apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is co figured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.
    Type: Application
    Filed: April 1, 2019
    Publication date: March 5, 2020
    Inventors: Sung-Joo An, Jeon-Il Lee, Kaoru Yamamoto, Jang-Hee Lee, Kee-Young Jun, Geun-O Jeong
  • METHOD OF MANUFACTURING METAL HARDMASK AND SEMICONDUCTOR DEVICE
    Publication number: 20190080908
    Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.
    Type: Application
    Filed: April 24, 2018
    Publication date: March 14, 2019
    Inventors: JANG-HEE LEE, SE-RAN OH, HYUN-SU KIM, IK-SOO KIM, SEONG-GIL PARK, GEUN-O JEONG