Patents by Inventor Geun Tae Cho

Geun Tae Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8476108
    Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: July 2, 2013
    Assignee: Jusung Engineering Co., Ltd
    Inventors: Sang Ki Park, Seong Ryong Hwang, Geun Tae Cho
  • Publication number: 20120100710
    Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
    Type: Application
    Filed: January 4, 2012
    Publication date: April 26, 2012
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Sang Ki PARK, Seong Ryong HWANG, Geun Tae CHO
  • Patent number: 8110435
    Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: February 7, 2012
    Assignee: Jusung Engineering Co., Ltd.
    Inventors: Sang Ki Park, Seong Ryong Hwang, Geun Tae Cho
  • Patent number: 8053059
    Abstract: Provided is a substrate for forming a pattern comprising an inorganic layer having a modified surface, wherein the modified surface is formed by coating a surface of the inorganic layer with a bifunctional molecule comprising a functional group having an affinity for a nanocrystal at one end of the molecule and a functional group having an affinity for the inorganic layer at the other end of the molecule. A method for forming a pattern of nanocrystals is also provided.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: November 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong Jae Choi, Kyung Sang Cho, Jae Young Choi, Dong Kee Yi, Hyeon Jin Shin, Seon Mi Yoon, In Young Song, Jong Hyeon Lee, Duk Young Jung, Geun Tae Cho
  • Publication number: 20100159640
    Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
    Type: Application
    Filed: December 10, 2009
    Publication date: June 24, 2010
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Sang Ki PARK, Seong Ryong HWANG, Geun Tae CHO
  • Publication number: 20080182072
    Abstract: Provided is a substrate for forming a pattern comprising an inorganic layer having a modified surface, wherein the modified surface is formed by coating a surface of the inorganic layer with a bifunctional molecule comprising a functional group having an affinity for a nanocrystal at one end of the molecule and a functional group having an affinity for the inorganic layer at the other end of the molecule. A method for forming a pattern of nanocrystals is also provided.
    Type: Application
    Filed: June 1, 2007
    Publication date: July 31, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seong Jae Choi, Kyung Sang Cho, Jae Young Choi, Dong Kee Yi, Hyeon Jin Shin, Seon Mi Yoon, In Young Song, Jong Hyeon Lee, Duk Young Jung, Geun Tae Cho