Abstract: A semiconductor light emitting device includes a first conductivity type semiconductor, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer, an electrode layer on the second conductivity type semiconductor, and a passivation layer covering at least side surfaces of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer. The angle between the lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less. The passivation layer includes a first portion disposed on a side surface of the first conductivity type semiconductor and having a first thickness, and a second portion on a side surface of the electrode layer and having a second thickness different from the first thickness.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Abstract: A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.

Abstract: A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.

Abstract: A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.

Abstract: A light-emitting package includes a light-emitting structure having a first surface and a second surface opposite to the first surface. The light-emitting package further includes an electrode layer disposed on the first surface and an insulating layer disposed on the light-emitting structure and the electrode layer. The light-emitting package additionally includes an interconnection conductive layer penetrating the insulating layer and connected to the electrode layer and a reflective layer disposed between the insulating layer and the interconnection conductive layer. The reflective layer reflects light generated from the light-emitting structure in a direction toward the second surface.

Abstract: A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.

Abstract: A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar

Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar

Abstract: There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.