Patents by Inventor Geunwoo Hwang

Geunwoo Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Near-infrared light sensors including 2-dimensional insulator
    Patent number: 10861996
    Abstract: A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: December 8, 2020
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Sanghyun Jo, Heejun Yang, Geunwoo Hwang, Hyeonjin Shin
  • NEAR-INFRARED LIGHT SENSORS INCLUDING 2-DIMENSIONAL INSULATOR
    Publication number: 20190252569
    Abstract: A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.
    Type: Application
    Filed: December 26, 2018
    Publication date: August 15, 2019
    Applicants: Samsung Electronics Co., Ltd., Research and Business Foundation Sungkyunkwan University
    Inventors: Sanghyun Jo, Heejun Yang, Geunwoo Hwang, Hyeonjin Shin