Patents by Inventor Ghada Koleilat
Ghada Koleilat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190173031Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: October 8, 2018Publication date: June 6, 2019Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20180076405Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: August 11, 2017Publication date: March 15, 2018Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 9735384Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: February 8, 2016Date of Patent: August 15, 2017Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20160172611Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: February 8, 2016Publication date: June 16, 2016Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 9257582Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: August 11, 2014Date of Patent: February 9, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20150144879Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: August 11, 2014Publication date: May 28, 2015Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 8975509Abstract: A recombination layer with a gradient work function is provided which increases the power-conversion efficiency of multijunction photovoltaic devices by reducing the energy barrier to charge carriers migrating between pairs of photovoltaic junctions thereby facilitating the optimal recombination of opposing electron and hole currents generated when the photovoltaic is illuminated.Type: GrantFiled: February 7, 2011Date of Patent: March 10, 2015Assignee: The Governing Council of the University of TorontoInventors: Aaron Barkhouse, Xihua Wang, Edward H. Sargent, Ghada Koleilat, Lukasz Brzozowski
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Patent number: 8803128Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 8, 2011Date of Patent: August 12, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 8476616Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 16, 2011Date of Patent: July 2, 2013Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20130001520Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: September 8, 2011Publication date: January 3, 2013Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20120205624Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: September 16, 2011Publication date: August 16, 2012Inventors: Edward Hatley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20110297217Abstract: A recombination layer with a gradient work function is provided which increases the power-conversion efficiency of multijunction photovoltaic devices by reducing the energy barrier to charge carriers migrating between pairs of photovoltaic junctions thereby facilitating the optimal recombination of opposing electron and hole currents generated when the photovoltaic is illuminated.Type: ApplicationFiled: February 7, 2011Publication date: December 8, 2011Applicant: The Governing Council of the University of TorontoInventors: Aaron Barkhouse, Xihua Wang, Edward H. Sargent, Ghada Koleilat, Lukasz Brzozowski
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Patent number: 8022391Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: April 20, 2009Date of Patent: September 20, 2011Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Jiang Tang, Keith William Johnston, Andras Geza Pattantyus-Abraham, Gerasimos Konstantatos, Ethan Jacob Dukenfield Klem, Stefan Myrskog, Dean Delehanty MacNeil, Jason Paul Clifford, Larissa Levina
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Publication number: 20100044676Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: ApplicationFiled: April 20, 2009Publication date: February 25, 2010Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Jiang Tang, Keith William Johnston, Andras Geza Pattantyus-Abraham, Gerasimos Konstantatos, Ethan Jacob Dukenfield Klem, Stefan Myrskog, Dean Delehanty MacNeil, Jason Paul Clifford, Larissa Levina