Abstract: The present invention is a method for reconfiguring a RAM into a ROM. First a RAM is fabricated on a platform ASIC in which the memory is patterned with first and second metal layers that intersect over each cell, wherein the first metal layer comprises local core cell nodes and the second metal layer comprises power/ground. The RAM is also fabricated with metal junction points on the first metal layer in at least a portion of the intersections. Thereafter, the RAM is reconfigured to a ROM by forming vias between the intersections of the first and second metal layers over the junction points to connect the first metal layer to the second metal layer.

Abstract: A method for allowing native, functional, and test configurations of a memory to be independent of one another includes steps as follows. A memory is first provided. The memory has a native configuration including k words and n data output pins, k and n being positive integers. Each of the k words has a width of n bits. Then the n data output pins are connected to a programmable multiplexer for multiplexing the n data output pins into at least one group of data output pins of the programmable multiplexer. Each of the at least one group of data output pins has no more than n data output pins and is suitable for enabling the memory to have at least one of a test configuration or a functional configuration. At user's discretion, the test configuration may or may not have a width of n bits, the functional configuration may or may not have a width of n bits, and the test configuration and the functional configuration may or may not have the same width.

Abstract: The present invention is a method for reconfiguring a RAM into a ROM. First a RAM is fabricated on a platform ASIC in which the memory is patterned with first and second metal layers that intersect over each cell, wherein the first metal layer comprises local core cell nodes and the second metal layer comprises power/ground. The RAM is also fabricated with metal junction points on the first metal layer in at least a portion of the intersections. Thereafter, the RAM is reconfigured to a ROM by forming vias between the intersections of the first and second metal layers over the junction points to connect the first metal layer to the second metal layer.

Abstract: A pin-based memory power modeling method using arc-based characterization includes steps as follows. All power arcs of a memory model are identified and characterized. A power arc is selected from the identified and characterized power arcs. Output bus switching power is computed by removing overlapping power using the selected power arc, and a temporary value for various input ramp times and output loads is derived. Output pin power for the selected power arc is calculated using the temporary value and a ratio of a number of output bits switching over an entire bus width. Switching power for the selected power arc is calculated by a power estimation tool based on port activity and an input intrinsic power value.

Abstract: A BISR scheme which provides for on-chip assessment of the amount of repair on a given memory and for the flagging of any device as a fail when the device exceeds a pre-determined limit. Preferably, a counter is built and loaded through a test pattern during production testing, and the counter establishes the threshold for pass/fail criteria. The BISR is configured to load a repair solution and then test the memories for any additional failures and if there are any, repair them (provided enough redundant elements are available). In addition, a reliability controller for BISR designs can be provided, where the reliability controller contains a register set and a number of counters at the chip-level which can be loaded through a test pattern during production tests, where one of the counters contains the number of memories to be allowed for repair.

Abstract: A BISR mode and associated method for testing memory. All redundant elements of the memory including the ones which are not used are tested, and interaction between redundant elements of the memory and adjacent functional memory are checked. Repair information is used to repair the memory. In addition, redundant elements which are not needed to be used for repairing the memory are forced to be used, such as by faking defects to remap good elements with redundant elements.

Abstract: A BISR scheme which provides that fuse blocks are shared between memories to reduce hard-BISR implementation costs. The scheme includes a plurality of memories serially connected to a fuse controller. A plurality of fuse blocks are also serially connected to the fuse controller. There are more memory instances than there are fuse blocks, and the fuse controller is configured to allow the fuse blocks to be shared between memories. Preferably, each fuse block includes fuse elements which can be programmed with the memory instance number which needs to be repaired. The fuse block reduces routing congestion and is preferably configured to provide the flexibility of assigning any fuse block to any instance that needs repair. The programmable fuse elements are preferably loaded into a counter (which is preferably part of the fuse controller) which ensures that the correct block information gets loaded into the corresponding memory instance.

Abstract: A memory array has memory elements arranged in rows and columns. Each column has a respective bit line. A plurality of bit line input-output nodes are each switchably coupled to either a respective one of the bit lines or another one of the bit lines.

Abstract: A fuse circuit that includes a fuse and a full latch connected to the fuse. The fuse circuit is configured to receive a plurality of input signals including a preset signal and an enable signal. Preferably, a first pass gate is connected to the fuse and to the full latch and is configured to receive the enable signal and a second pass gate is connected to the full latch and is configured to receive the preset signal. Preferably, an output signal line is connected to the full latch and is configured to carry the output signal. The fuse circuit is configured to set the fuse using the preset signal. Ideally, the fuse circuit is configured to provide no direct path between VDD and VSS while using the preset signal to set the fuse. The fuse circuit is configured to provide an output signal which is dependent on the status of the fuse and the state of the enable signal.

Abstract: According to the present invention, bitlines may be precharged to the supply voltage (Vdd) less a multiple of the transistor threshold voltage (Vtn), where the multiple is greater than or equal to 2. By precharging to a lower voltage, power consumption is reduced and memory speed is increased.