Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.

Abstract: A silicon on insulator (SOI) dynamic random access memory (DRAM) cell and array and method of manufacture. The memory cell includes a trench storage capacitor connected by a self aligned buried strap to a vertical access transistor. A buried oxide layer isolates an SOI layer from a silicon substrate. The trench capacitor is formed in the substrate and the access transistor is formed on a sidewall of the SOI layer. A polysilicon strap connected to the polysilicon plate of the storage capacitor provides a self-aligned contact to the source of the access transistor. Initially, the buried oxide layer is formed in the wafer. Deep trenches are etched, initially just through the SOI layer and the BOX layer. Protective sidewalls are formed in the trenches. Then, the deep trenches are etched into the substrate. The volume in the substrate is expanded to form a bottle shaped trench.

Abstract: A silicon on insulator (SOI) dynamic random access memory (DRAM) cell, array and method of manufacture. The memory cell includes a vertical access transistor above a trench storage capacitor in a layered wafer. A buried oxide (BOX) layer formed in a silicon wafer isolates an SOI layer from a silicon substrate. Deep trenches are etched through the upper surface SOI layer, the BOX layer and into the substrate. Each trench capacitor is formed in the substrate and, the access transistor is formed on a sidewall of the SOI layer. Recesses are formed in the BOX layer at the SOI layer. A polysilicon strap recessed in the BOX layer connects each polysilicon storage capacitor plate to a self-aligned contact at the source of the access transistor. Dopant is implanted into the wafer to define device regions. Access transistor gates are formed along the SOI layer sidewalls. Shallow trenches are formed and filled with insulating material to isolate cells from adjacent cells.

Abstract: A computer-based method automatically synthesizes, optimizes and compiles high performance control logic using SRCMOS LOGIC ARRAY MACROS, abbreviated as SLAMs.