Patents by Inventor Ghazal Saheli

Ghazal Saheli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11396698
    Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: July 26, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jeffrey W. Anthis, Ghazal Saheli, Feng Q. Liu, David Thompson
  • Publication number: 20210066592
    Abstract: Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.
    Type: Application
    Filed: August 24, 2020
    Publication date: March 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Nasrin Kazem, Jeffrey W. Anthis, Ghazal Saheli, David Thompson
  • Publication number: 20180195170
    Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.
    Type: Application
    Filed: January 5, 2018
    Publication date: July 12, 2018
    Inventors: Jeffrey W. Anthis, Ghazal Saheli, Feng Q. Liu, David Thompson
  • Patent number: 9881787
    Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 30, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chien-Teh Kao, Benjamin Schmiege, Xuesong Lu, Juno Yu-Ting Huang, Yu Lei, Yung-Hsin Lee, Srinivas Gandikota, Rajkumar Jakkaraju, Chikuang Charles Wang, Ghazal Saheli, Benjamin C. Wang, Xinliang Lu, Pingyan Lei
  • Publication number: 20160372324
    Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.
    Type: Application
    Filed: June 16, 2016
    Publication date: December 22, 2016
    Inventors: Chien-Teh Kao, Benjamin Schmiege, Xuesong Lu, Juno Yu-Ting Huang, Yu Lei, Yung-Hsin Lee, Srinivas Gandikota, Rajkumar Jakkaraju, Chikuang Charles Wang, Ghazal Saheli, Benjamin C. Wang, Xinliang Lu, Pingyan Lei