Abstract: The disclosed subject matter is a method to reduce film shedding from components internal to a process chamber. In one example, the method includes forming a dielectric film layer on each of a successive plurality of substrates within the process chamber, and, after a pre-determined number of the successive plurality of substrates have had the dielectric film layers formed thereon, forming an undoped-silicate glass (USG) film on the components internal to the process chamber to passivate accumulated levels of the dielectric film layers. Other devices and methods are disclosed.