Patents by Inventor Ghil-geun Oh

Ghil-geun Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10473716
    Abstract: A leakage current measurement circuit is provided. The leakage current measurement circuit includes a leakage generation circuit and a detection circuit. The leakage generation circuit generates a leakage current from a start time point and generates a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current. The detection circuit generates a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: November 12, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ghil-Geun Oh, Yeon-Joong Shin, Da-Rae Jung
  • Publication number: 20180356462
    Abstract: A leakage current measurement circuit is provided. The leakage current measurement circuit includes a leakage generation circuit and a detection circuit. The leakage generation circuit generates a leakage current from a start time point and generates a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current. The detection circuit generates a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage.
    Type: Application
    Filed: January 2, 2018
    Publication date: December 13, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ghil-Geun OH, Yeon-Joong SHIN, Da-Rae JUNG
  • Publication number: 20080143472
    Abstract: A fuse structure of a semiconductor device includes a fuse pattern having a contact portions at opposite ends of the fuse pattern, wherein the fuse pattern includes a first conductive layer and a second conductive layer stacked sequentially, and a first electrode and a second electrode connected to the contact portions respectively. The fuse pattern is configured to be electrically shorted during a fuse program operation. A bottleneck portion can be formed at the center of the fuse pattern spaced apart from pad portions formed at opposite ends of the fuse pattern to which an electrode is connected, enabling breakage of the fuse pattern to be spaced apart from a contact portion of the electrode. As a result, a profile of a portion broken after a fuse program operation is improved and leakage current caused by a poor profile is suppressed.
    Type: Application
    Filed: December 13, 2007
    Publication date: June 19, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ghil-Geun Oh, Jae-Hyun Ryu, Jae-Cheol Hwang
  • Publication number: 20060284651
    Abstract: Provided are a circuit and method of blocking access to a protected device. The blocking circuit includes a fusing circuit and a comparing circuit. The fusing circuit includes at least two fuses. The comparing circuit receives signals transferred through the respective fuses, which are obtained using resistors, compares the received signals and outputs a signal having a predetermined logic level only when the voltage levels of both the received signals are higher than a threshold level.
    Type: Application
    Filed: May 10, 2006
    Publication date: December 21, 2006
    Inventors: Ghil-geun Oh, Je-yeul Jang