Abstract: Electromagnetic radiation such as, in particular, infrared radiation is detected opto-electronically by means of a superlattice structure forming quantum wells having a single bound state; in the interest of minimizing dark-current, relatively wide barriers are used between quantum wells. Resulting highly sensitive, high-speed detectors can be used in optical communications, for terrain mapping, and for infrared viewing. Furthermore, upon application of a variable electrical potential across the superlattice structure, radiation traversing such structure can be modulated.

Abstract: A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.