Patents by Inventor Gi A LEE

Gi A LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Variable resistance memory device including phase change area defined by spacers
    Patent number: 9190613
    Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: November 17, 2015
    Assignee: SK Hynix Inc.
    Inventors: Ha Chang Jung, Gi A Lee
  • VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150076441
    Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole.
    Type: Application
    Filed: November 26, 2014
    Publication date: March 19, 2015
    Inventors: Ha Chang JUNG, Gi A LEE
  • VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150014621
    Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole.
    Type: Application
    Filed: October 2, 2013
    Publication date: January 15, 2015
    Applicant: SK hynix inc.
    Inventors: Ha Chang JUNG, Gi A LEE
  • Variable resistance memory device and method of manufacturing the same
    Patent number: 8933430
    Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: January 13, 2015
    Assignee: SK Hynix Inc.
    Inventors: Ha Chang Jung, Gi A Lee