Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.

Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.

Abstract: A method of manufacturing an end piece for a camshaft may include forming a shape of an end piece to be coupled to a camshaft by compacting steel and powder in a net-shape manner and by sintering steel and a powder compact that are preassembled to each other.

Abstract: A method of manufacturing an end piece for a camshaft may include forming a shape of an end piece to be coupled to a camshaft by compacting steel and powder in a net-shape manner and by sintering steel and a powder compact that are preassembled to each other.

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

Abstract: A semiconductor light-emitting device includes a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a reflective electrode layer covering a top surface of the second semiconductor layer; an insulating structure covering a region of the top surface of the second semiconductor layer, the region being around the reflective electrode layer; a first interconnection conductive layer contacting a contact region of the first semiconductor layer through the insulating structure and, together with the insulating structure, constituting an omni-directional reflector (ODR) structure; and a second interconnection conductive layer contacting the reflective electrode layer through the insulating structure.

Abstract: A method of manufacturing an end piece for a camshaft may include forming a shape of an end piece to be coupled to a camshaft by compacting steel and powder in a net-shape manner and by sintering steel and a powder compact that are preassembled to each other.

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract: An embodiment includes a semiconductor light-emitting device comprising: an electrode pad; a first under-barrier metal (UBM) layer stacked on the electrode pad; a second UBM layer stacked on the first UBM layer and having a multilayered structure including at least two layers; and a solder bump disposed on the second UBM layer, wherein adhesion between the second UBM layer and the first UBM layer is higher than adhesion between the first UBM layer and the solder bump.

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract: Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.

Abstract: An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced.

Abstract: According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a second cavity within a second end which receives a dopant source for diffusion, and a diffusion port disposed between the diffusion target and the dopant source, wherein the diffusion port provides fluid communication between the first cavity and the second cavity.

Abstract: Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate.

Abstract: Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction structure including a p-type semiconductor silicide and an n-type semiconductor silicide. The image sensor may include a substrate, a photodetector unit having the photodiode, which may perform photoelectric transformation, and/or a signal transmitter transmitting a signal generated by the photodetector unit to an output unit. The photodetector unit and/or the signal transmitter may be integrated in the substrate.

Abstract: In a method of manufacturing a semiconductor device, a pad including at least one insulating interlayer and at least one conductive wiring may be formed in a pad area of a substrate. At least one wiring may be formed adjacent to the conductive wiring. At least one insulation layer may be formed adjacent to the insulating interlayer. At least one crack preventing structure may be formed in the insulation layer. The crack preventing structure may continuously extend in the insulation layer and portions of the insulation layer may also be continuous. When a semiconductor device includes at least one crack preventing structure disposed adjacent to a pad, a degradation of the semiconductor chip caused by an external impact and/or a stress may be efficiently prevented by the crack preventing structure.

Abstract: An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced.