Abstract: A plasma diagnosis system includes a first planar substrate on which at least a part of plasma to be diagnosed generated in a plasma generation device is deposited; a second planar substrate disposed below the first planar substrate; a sensor unit which is disposed in a cavity formed in the first planar substrate to measure a plasma parameter of the generated plasma and is enclosed by an insulator to be electrically insulated from the firs planar substrate; and an electronic device which is located between the first planar substrate and the second planar substrate, is shielded from the first planar substrate and the second planar substrate by means of ground plates, respectively, and measures and processes in real time a characteristic value of the plasma using an electric signal generated from the sensor unit by the plasma parameter.

Abstract: There is provided a method for etching a silicon-containing film. The method includes: introducing a substrate having a first silicon-containing film and a second silicon-containing film into a process chamber of an etching apparatus; supplying at least one etching gas including F3NO into the process chamber; applying a predetermined power to the process chamber maintained at a predetermined pressure to generate direct plasma in the process chamber; and etching the first silicon-containing film on the substrate by reactive species (radicals) of the etching gas activated by the direct plasma. The predetermined pressure is set within a predetermined range in which the slope of the etch rate of the first silicon-containing film with respect to the pressure differs from the slope of the etch rate of the second silicon-containing film with respect to the pressure in terms of sign.

Abstract: The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.

Abstract: The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.

Abstract: The present invention relates to an apparatus for decomposing perfluorocarbons and harmful gas using a high-density confined plasma source that includes: a reactor having inlet and outlet ports formed in the top and bottom sides thereof for receiving and discharging perfluorocarbons and harmful gas, a chamber having an internal passage, a ferrite core formed outside of the chamber and connected to an antenna, and a permanent magnet arranged around the ferrite core; a gas supply portion for supplying a gas for decomposing the perfluorocarbons and harmful gas into the reactor; and a generator and a controller for supplying electric power for the antenna of the reactor.

Abstract: The present invention relates to an apparatus for decomposing perfluorocarbons and harmful gas using a high-density confined plasma source that includes: a reactor having inlet and outlet ports formed in the top and bottom sides thereof for receiving and discharging perfluorocarbons and harmful gas, a chamber having an internal passage, a ferrite core formed outside of the chamber and connected to an antenna, and a permanent magnet arranged around the ferrite core; a gas supply portion for supplying a gas for decomposing the perfluorocarbons and harmful gas into the reactor; and a generator and a controller for supplying electric power for the antenna of the reactor.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of improving solar-ray transmittance and dispersion efficiency by the increased effective area for absorbing the solar ray through the use of substrate with a predetermined pattern having protrusions and depressions, wherein the method comprises preparing a substrate with a predetermined pattern having protrusions and depressions on its one surface; forming a front electrode on the substrate; forming a semiconductor layer on the front electrode; and forming a rear electrode on the semiconductor layer.

Abstract: An apparatus for etching a substrate includes: a chamber; a susceptor in the chamber, the susceptor including at least one loading portion corresponding to at least one substrate; a gas supply over the susceptor, the gas supply including a hollow and at least one through hole corresponding to the at least one loading portions; and at least one shielding means interposed into the at least one through holes, the at least one shielding means including a body part and a hanging part on the body part, the body part having a cross-sectional area smaller than the at least one through holes, and the hanging part outwardly protruding from the body part, wherein the at least one shielding means is suspended on the gas supply by the hanging part, and wherein the body part shields a central portion of the at least one substrate and exposes an edge portion of the at least one substrate.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of improving solar-ray transmittance and dispersion efficiency by the increased effective area for absorbing the solar ray through the use of substrate with a predetermined pattern having protrusions and depressions, wherein the method comprises preparing a substrate with a predetermined pattern having protrusions and depressions on its one surface; forming a front electrode on the substrate; forming a semiconductor layer on the front electrode; and forming a rear electrode on the semiconductor layer.

Abstract: An apparatus for etching a substrate includes: a chamber; a susceptor in the chamber, the susceptor including at least one loading portion corresponding to at least one substrate; a gas supply over the susceptor, the gas supply including a hollow and at least one through hole corresponding to the at least one loading portions; and at least one shielding means interposed into the at least one through holes, the at least one shielding means including a body part and a hanging part on the body part, the body pail having a cross-sectional area smaller than the at least one through holes, and the hanging part outwardly protruding from the body part, wherein the at least one shielding means is suspended on the gas supply by the hanging part, and wherein the body part shields a central portion of the at least one substrate and exposes an edge portion of the at least one substrate.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, including: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: A grounding cable includes a first grounding wire, a first outer cover surrounding the first grounding wire and made of an insulating material, a second grounding wire enclosing the first outer cover, and a second outer cover surrounding the second grounding wire.