Patents by Inventor Gi Gwan KIM

Gi Gwan KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153948
    Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.
    Type: Application
    Filed: January 18, 2024
    Publication date: May 9, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Soo KIM, Gi Gwan PARK, Jung Hun CHOI, Koung Min RYU, Sun Jung LEE
  • Patent number: 11956937
    Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: April 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Il Kim, Jung-Gun You, Gi-Gwan Park
  • Patent number: 11424163
    Abstract: Provided are a three-dimensional electronic device manufactured through a polymer frame solvent-plasticizing process and a method for manufacturing the three-dimensional electronic device including a polymer frame configured to have a planar figure-like shape so as to have a polygonal bottom and adjacent surfaces which are formed to be extended from respective edges of the bottom; and a flexible electronic device which is transferred to the polymer frame. The polymer frame is exposed to organic solvent vapor and has a change in Young's modulus.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: August 23, 2022
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Heung Cho Ko, Gi Gwan Kim, Hun Soo Jang, Seong Hyeon Kang, Yeong Min Kim, Seong Gwang Yoo, Jung Il Yoo
  • Publication number: 20210066131
    Abstract: Provided are a three-dimensional electronic device manufactured through a polymer frame solvent-plasticizing process and a method for manufacturing the three-dimensional electronic device including a polymer frame configured to have a planar figure-like shape so as to have a polygonal bottom and adjacent surfaces which are formed to be extended from respective edges of the bottom; and a flexible electronic device which is transferred to the polymer frame. The polymer frame is exposed to organic solvent vapor and has a change in Young's modulus.
    Type: Application
    Filed: March 14, 2019
    Publication date: March 4, 2021
    Inventors: Heung Cho KO, Gi Gwan KIM, Hun Soo JANG, Seong Hyeon KANG, Yeong Min KIM, Seong Gwang YOO, Jung Il YOO