Abstract: Particular aqueous slurry compositions including fine abrasive particles and polishing methods for polishing insulating films such as silicon dioxide and silicon nitride using such slurry compositions are provided in which the abrasive particles have a mean particle surface area of at least about 100 m2/g and the slurry compositions include the abrasive particles and at least one additive selected from potassium hydroxide, sodium hydroxide, ammonium hydroxide and amine compounds.

Abstract: A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2NH2)n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.

Abstract: A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2NH2)n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.