Patents by Inventor Gi-Hyeon Kim

Gi-Hyeon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals
    Patent number: 6465356
    Abstract: The present invention relates to a method for fabricating a semiconductor device; and, more particularly, to a photoresist pattern to form a fine line width of about 0.1 &mgr;m or less. A method for forming fine photoresist patterns according to the present invention comprises the step of: forming photoresist patterns over a semiconductor substrate using a stepper; and ashing the photoresist patterns using oxygen radicals in order to decrease line width of the photoresist patterns. The oxygen radicals are formed by a thermal decomposition of an ozone gas in an ozone asher. Accordingly, the present invention overcomes the resolution of the stepper by controlling the ashing rate at a low temperature using the oxygen radicals in the ozone asher.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: October 15, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Gi-Hyeon Kim, Sang-Soo Park
  • Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals
    Publication number: 20020001957
    Abstract: The present invention relates to a method for fabricating a semiconductor device; and, more particularly, to a photoresist pattern to form a fine line width of about 0.1 &mgr;m or less. A method for forming fine photoresist patterns according to the present invention comprises the step of: forming photoresist patterns over a semiconductor substrate using a stepper; and ashing the photoresist patterns using oxygen radicals in order to decrease line width of the photoresist patterns. The oxygen radicals are formed by a thermal decomposition of an ozone gas in an ozone asher. Accordingly, the present invention overcomes the resolution of the stepper by controlling the ashing rate at a low temperature using the oxygen radicals in the ozone asher.
    Type: Application
    Filed: June 27, 2001
    Publication date: January 3, 2002
    Inventors: Gi-Hyeon Kim, Sang-Soo Park