Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: The present disclosure relates to a method of fabricating a perovskite solar cell, including: forming an electron transport layer on a substrate; forming a light absorbing layer containing a perovskite material on the electron transport layer; forming a hole transport layer on the light absorbing layer; and forming an electrode on the hole transport layer. Herein, the forming of the light absorbing layer is performed by impregnating the substrate on which the electron transport layer is formed in a nonpolar solvent and performing a heat treatment thereto.