Abstract: A resistive hydrogen sensor comprising a sensing layer having semiconducting single-walled carbon nanotubes (SWCNTs), and a manufacturing method therefor are disclosed. The hydrogen sensor comprises: a substrate; a sensing layer, which is formed on the substrate and comprises semiconducting SWCNTs; and electrodes formed on the surface of the sensing layer in the direction opposite to the direction facing the substrate, or formed between the sensing layer and the substrate, and spaced from each other, and thus has a sensitivity of 5% or higher and a response time of two seconds or less with respect to a hydrogen gas having a hydrogen concentration of 4 vol % in comparison to when there is no hydrogen, and can be operated at a low temperature.

Abstract: Discussed is a light emitting device including a first electrode and a second electrode facing each other, a hole transport layer, a first emission layer, and an electron transport layer sequentially disposed between the first electrode and the second electrode. In the transport layer, a first material of a metal halide and a second material of an n-type inorganic compound are included. The second material is included as a dopant in the first material. The hole transport layer can contain no organic material and can be amorphous.

Abstract: A photocharge storage element includes a gate insulator formed on a gate electrode, a channel formed on the gate insulator between a source electrode and a drain electrode, and an organic photoelectric conversion element formed on the channel. The organic photoelectric conversion element generates photocharges in response to light. The channel accumulates the photocharges generated by the organic photoelectric conversion element. The photocharges accumulated in the channel are read out from the channel in response to a voltage between the source electrode and the drain electrode.

Abstract: The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in O2 plasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.

Abstract: The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in O2 plasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.