Patents by Inventor Gi Soon Park

Gi Soon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for transmitting data or control information having high reliability conditions, and device therefor
    Patent number: 11917651
    Abstract: Disclosed are various methods for transmitting or receiving data or control information having high reliability conditions. A method for operating a terminal which transmits uplink control information (UCI) includes: a step of generating UCI; a step of comparing the priority of an uplink (UL) control channel for the transmission of the UCI with the priority of a UL data channel when some symbols of the UL control channel and the UL data channel overlap; and a step of selecting the UL channel having a higher priority among the UL control channel and the UL data channel, and transmitting the UCI to a base station through the selected UL channel.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: February 27, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Cheul Soon Kim, Sung Hyun Moon, Seung Kwon Baek, Gi Yoon Park, Ok Sun Park, Jae Su Song
  • METHOD FOR MANUFACTURING CIGS THIN FILM FOR SOLAR CELL
    Publication number: 20190319141
    Abstract: Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.
    Type: Application
    Filed: June 29, 2018
    Publication date: October 17, 2019
    Inventors: Byoung Koun MIN, Gi Soon PARK, Hyung Suk OH, Yun Jeong HWANG
  • Method for manufacturing CIGS thin film for solar cell
    Patent number: 10446703
    Abstract: Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: October 15, 2019
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byoung Koun Min, Gi Soon Park, Hyung Suk Oh, Yun Jeong Hwang