Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: Disclosed is a method for producing a Heusler-based phase thermoelectric material using an amorphous phase precursor. More specifically disclosed is a method for producing a powder or bulk thermoelectric material having a microstructure including a Heusler-based phase with a thermoelectric effect by crystallization of an amorphous phase precursor prepared by a non-equilibrium processes. Also disclosed is a device using a Heusler-based phase thermoelectric material produced by the method. The method largely avoids the efficiency problems of conventional methods, including low productivity in scaling up caused by long annealing time, high annealing temperature, and contamination during nanopowder production, achieving improved process efficiency. In addition, the method enables efficient production of a thermoelectric material having a nano-sized microstructure that is difficult to produce by a conventional method.

Abstract: Disclosed is a method for producing a Heusler-based phase thermoelectric material using an amorphous phase precursor. More specifically disclosed is a method for producing a powder or bulk thermoelectric material having a microstructure including a Heusler-based phase with a thermoelectric effect by crystallization of an amorphous phase precursor prepared by a non-equilibrium processes. Also disclosed is a device using a Heusler-based phase thermoelectric material produced by the method. The method largely avoids the efficiency problems of conventional methods, including low productivity in scaling up caused by long annealing time, high annealing temperature, and contamination during nanopowder production, achieving improved process efficiency. In addition, the method enables efficient production of a thermoelectric material having a nano-sized microstructure that is difficult to produce by a conventional method.

Abstract: A catalyst includes LTA zeolite including copper ions, wherein a Si/Al ratio of the LTA zeolite is 2 to 50. The catalyst is coated on a honeycomb carrier or a filter. The catalyst removes NOx from a reaction gas at 100° C. or above. The catalyst has an NOx conversion rate of 80% at 450° C. or above.

Abstract: A catalyst includes LTA zeolite including copper ions, wherein a Si/Al ratio of the LTA zeolite is 2 to 50. The catalyst is coated on a honeycomb carrier or a filter. The catalyst removes NOx from a reaction gas at 100° C. or above. The catalyst has an NOx conversion rate of 80% at 450° C. or above.

Abstract: A catalyst includes LTA zeolite including copper ions, wherein a Si/Al ratio of the LTA zeolite is 2 to 50. The catalyst is coated on a honeycomb carrier or a filter. The catalyst removes NOx from a reaction gas at 100° C. or above. The catalyst has an NOx conversion rate of 80% at 450° C. or above.

Abstract: A catalyst includes LTA zeolite including copper ions, wherein a Si/Al ratio of the LTA zeolite is 2 to 50. The catalyst is coated on a honeycomb carrier or a filter. The catalyst removes NOx from a reaction gas at 100° C. or above. The catalyst has an NOx conversion rate of 80% at 450° C. or above.

Abstract: A method for manufacturing a zeolite catalyst includes: manufacturing a first Linde Type A (LTA) zeolite using an LTA seed; manufacturing a second LTA zeolite including ions by substituting ions to the first LTA zeolite; and manufacturing a copper LTA zeolite by performing copper ion exchange on the second LTA zeolite.

Abstract: A catalyst according to an example embodiment includes an LTA zeolite having copper ions, wherein the weight ratio of copper to aluminum is from about 0.14 to about 0.58, and the weight ratio of silicon to aluminum of the LTA zeolite exceeds 1.

Abstract: A catalyst includes LTA zeolite including copper ions, wherein a Si/Al ratio of the LTA zeolite is 2 to 50. The catalyst is coated on a honeycomb carrier or a filter. The catalyst removes NOx from a reaction gas at 100° C. or above. The catalyst has an NOx conversion rate of 80% at 450° C. or above.

Abstract: A method for manufacturing a zeolite catalyst includes: manufacturing a first Linde Type A (LTA) zeolite using an LTA seed; manufacturing a second LTA zeolite including ions by substituting ions to the first LTA zeolite; and manufacturing a copper LTA zeolite by performing copper ion exchange on the second LTA zeolite.