Patents by Inventor Gi Woong SHIM

Gi Woong SHIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared thereby
    Patent number: 11268210
    Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: March 8, 2022
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool Choi, Woonggi Hong, Gi Woong Shim
  • METHOD FOR MANUFACTURING TRANSITION METAL CHALCOGENIDE AND TRANSITION METAL CHALCOGENIDE PREPARED THEREBY
    Publication number: 20220010456
    Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Sung-Yool Choi, Woonggi Hong, Gi Woong Shim
  • METHOD FOR SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE ALLOYS USING LIGHT SOURCES AND TRANSITION METAL DICHALCOGENIDE ALLOYS SYNTHESIZED BY THE SAME
    Publication number: 20200199710
    Abstract: Provided is a method for preparing a transition metal dichalcogenide alloy, which includes: a step of stacking two or more transition metal dichalcogenide compound thin films having different bandgaps on a substrate; a step of irradiating light to the two or more transition metal dichalcogenide compound thin films having different bandgaps; and a step of preparing a transition metal alloy by evaporating a dichalcogenide compound of the transition metal dichalcogenide compound thin film by the light.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Gi Woong SHIM
  • TRANSITION METAL DICHALCOGENIDE THIN FILM, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME
    Publication number: 20200181768
    Abstract: Provided is a method for manufacturing a transition metal dichalcogenide (TMDC) thin film, which includes: a step of injecting two or more transition metal dichalcogenide precursors into a reactor equipped with a substrate in vapor phase; and a step of forming a transition metal dichalcogenide thin film on the substrate by decomposing the transition metal dichalcogenide precursors under an oxygen condition.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 11, 2020
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool CHOI, Gi Woong SHIM, Woonggi HONG