Patents by Inventor Giacomo BADANO

Giacomo BADANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11152406
    Abstract: A photodetection device including a pixel matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. An assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles ?i at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: October 19, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Giacomo Badano, Clément Lobre
  • Patent number: 11119251
    Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: September 14, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Giacomo Badano, Johan Rothman
  • Publication number: 20210199863
    Abstract: The invention relates to a detection component (1) for detecting electromagnetic radiation comprising at least one mask (140) arranged to block the electromagnetic radiation for at least one of the detection structures (122). The opaque mask (140) comprises a successive stack of a first metal layer (141), a second metal layer (142), a third transparent layer (143) having a low optical index, and an assembly of metal elements (144). The second metal layer (142), the transparent layer (143), and the assembly of metal elements (144) form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a component (1).
    Type: Application
    Filed: December 23, 2020
    Publication date: July 1, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jérôme LE PERCHEC, Giacomo BADANO
  • Publication number: 20200176494
    Abstract: A photodetection device including a pixels matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. The assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.
    Type: Application
    Filed: November 25, 2019
    Publication date: June 4, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Giacomo BADANO, Clement LOBRE
  • Publication number: 20190383969
    Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.
    Type: Application
    Filed: January 11, 2018
    Publication date: December 19, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Giacomo BADANO, Johan ROTHMAN
  • Patent number: 10461211
    Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: October 29, 2019
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Giacomo Badano, Clement Lobre, Roch Espiau de Lamaestre, Jean-Paul Chamonal
  • Patent number: 10141470
    Abstract: The invention relates to a photodiode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: November 27, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Boulard, Giacomo Badano, Olivier Gravrand
  • Publication number: 20180309016
    Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).
    Type: Application
    Filed: April 23, 2018
    Publication date: October 25, 2018
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Giacomo BADANO, Clement LOBRE, Roch ESPIAU DE LAMAESTRE, Jean-Paul CHAMONAL
  • Patent number: 9853173
    Abstract: The invention relates to a semiconductor structure intended to receive an electromagnetic wave. The semiconductor structure comprises at least one first semiconductor resonant optical cavity conformed to absorb at least partially the electromagnetic wave and to provide an electrical signal proportional to the part of the electromagnetic wave absorbed. The semiconductor structure further includes a second dielectric resonant optical cavity of which a resonance wavelength is comprised in the predetermined range of wavelengths and is preferentially equal to the wavelength ?0, the second resonant optical cavity being laid out to intercept at least part of the electromagnetic wave and being optically coupled to the first resonant optical cavity. The second resonant optical cavity is transparent to the predetermined range of wavelengths. The invention further relates to a semiconductor component comprising such a semiconductor structure and a method of manufacturing such a semiconductor structure.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: December 26, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Giacomo Badano, Christian Kriso
  • Publication number: 20170244001
    Abstract: The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).
    Type: Application
    Filed: February 15, 2017
    Publication date: August 24, 2017
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois BOULARD, Giacomo BADANO, Olivier GRAVRAND
  • Patent number: 9705015
    Abstract: A component intended for the detecting and/or the measuring of an electromagnetic radiation in a first range of wavelengths. The component includes a support including at least one first structure and a reception face in order to receive the electromagnetic radiation; an optical filter of the band-pass type in the first range of wavelengths arranged on the reception face of the support. The optical filter includes an adaptation zone covering the reception face of the support and with a refractive index less than 2; a first metal layer covering the adaptation zone and including regularly distributed through-holes. Each one of the through-holes contains a filling material.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: July 11, 2017
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Giacomo Badano, Emeline Lesmanne
  • Publication number: 20170069768
    Abstract: A component intended for the detecting and/or the measuring of an electromagnetic radiation in a first range of wavelengths. The component includes a support including at least one first structure and a reception face in order to receive the electromagnetic radiation; an optical filter of the band-pass type in the first range of wavelengths arranged on the reception face of the support. The optical filter includes an adaptation zone covering the reception face of the support and with a refractive index less than 2; a first metal layer covering the adaptation zone and including regularly distributed through-holes. Each one of the through-holes contains a filling material.
    Type: Application
    Filed: August 31, 2016
    Publication date: March 9, 2017
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Giacomo BADANO, Emeline LESMANNE
  • Publication number: 20160225923
    Abstract: The invention relates to a semiconductor structure intended to receive an electromagnetic wave. The semiconductor structure comprises at least one first semiconductor resonant optical cavity conformed to absorb at least partially the electromagnetic wave and to provide an electrical signal proportional to the part of the electromagnetic wave absorbed. The semiconductor structure further includes a second dielectric resonant optical cavity of which a resonance wavelength is comprised in the predetermined range of wavelengths and is preferentially equal to the wavelength ?0, the second resonant optical cavity being laid out to intercept at least part of the electromagnetic wave and being optically coupled to the first resonant optical cavity. The second resonant optical cavity is transparent to the predetermined range of wavelengths. The invention further relates to a semiconductor component comprising such a semiconductor structure and a method of manufacturing such a semiconductor structure.
    Type: Application
    Filed: February 1, 2016
    Publication date: August 4, 2016
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Giacomo BADANO, Christian KRISO