Abstract: A device for multi-spectral photo-detection in the infrared includes a photo-detection stage and a filtering stage superimposed on top of one another. The photo-detection stage includes a read circuit, an active layer incorporating a matrix of photodiodes, and a support substrate, superimposed together in that order. The filtering stage includes filtering areas of a first type, each formed of an interference filter capable of transmitting the wavelengths of a first spectral band and of blocking the wavelengths of a second spectral band, and filtering areas of a second type, capable of transmitting at least part of the wavelengths of the second spectral band. The device further includes an adhesive layer, located between the photo-detection stage and the filtering stage, on the support substrate side, and an anti-reflective coating, located between the adhesive layer and the support substrate.

Abstract: A detection component is provided for detecting electromagnetic radiation, the detection component comprising a mask arranged to block the electromagnetic radiation for at least one detector. The opaque mask comprises a successive stack of a first metal layer, a second metal layer, a third transparent layer having a low optical index, and an assembly of metal components. The second metal layer, the transparent layer, and the assembly of components form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a detection component.

Abstract: A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tr for a time ?tr, exhibits an electrical resistivity ?a|r at room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature Tr for the time ?tr.

Abstract: A photodetection device including a pixel matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. An assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles ?i at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.

Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.

Abstract: The invention relates to a detection component (1) for detecting electromagnetic radiation comprising at least one mask (140) arranged to block the electromagnetic radiation for at least one of the detection structures (122). The opaque mask (140) comprises a successive stack of a first metal layer (141), a second metal layer (142), a third transparent layer (143) having a low optical index, and an assembly of metal elements (144). The second metal layer (142), the transparent layer (143), and the assembly of metal elements (144) form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a component (1).

Abstract: A photodetection device including a pixels matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. The assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.

Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.

Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).

Abstract: The invention relates to a photodiode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).

Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).

Abstract: The invention relates to a semiconductor structure intended to receive an electromagnetic wave. The semiconductor structure comprises at least one first semiconductor resonant optical cavity conformed to absorb at least partially the electromagnetic wave and to provide an electrical signal proportional to the part of the electromagnetic wave absorbed. The semiconductor structure further includes a second dielectric resonant optical cavity of which a resonance wavelength is comprised in the predetermined range of wavelengths and is preferentially equal to the wavelength ?0, the second resonant optical cavity being laid out to intercept at least part of the electromagnetic wave and being optically coupled to the first resonant optical cavity. The second resonant optical cavity is transparent to the predetermined range of wavelengths. The invention further relates to a semiconductor component comprising such a semiconductor structure and a method of manufacturing such a semiconductor structure.

Abstract: The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).

Abstract: A component intended for the detecting and/or the measuring of an electromagnetic radiation in a first range of wavelengths. The component includes a support including at least one first structure and a reception face in order to receive the electromagnetic radiation; an optical filter of the band-pass type in the first range of wavelengths arranged on the reception face of the support. The optical filter includes an adaptation zone covering the reception face of the support and with a refractive index less than 2; a first metal layer covering the adaptation zone and including regularly distributed through-holes. Each one of the through-holes contains a filling material.

Abstract: A component intended for the detecting and/or the measuring of an electromagnetic radiation in a first range of wavelengths. The component includes a support including at least one first structure and a reception face in order to receive the electromagnetic radiation; an optical filter of the band-pass type in the first range of wavelengths arranged on the reception face of the support. The optical filter includes an adaptation zone covering the reception face of the support and with a refractive index less than 2; a first metal layer covering the adaptation zone and including regularly distributed through-holes. Each one of the through-holes contains a filling material.

Abstract: The invention relates to a semiconductor structure intended to receive an electromagnetic wave. The semiconductor structure comprises at least one first semiconductor resonant optical cavity conformed to absorb at least partially the electromagnetic wave and to provide an electrical signal proportional to the part of the electromagnetic wave absorbed. The semiconductor structure further includes a second dielectric resonant optical cavity of which a resonance wavelength is comprised in the predetermined range of wavelengths and is preferentially equal to the wavelength ?0, the second resonant optical cavity being laid out to intercept at least part of the electromagnetic wave and being optically coupled to the first resonant optical cavity. The second resonant optical cavity is transparent to the predetermined range of wavelengths. The invention further relates to a semiconductor component comprising such a semiconductor structure and a method of manufacturing such a semiconductor structure.