Abstract: The present invention is directed to a computer-implemented system for secure storage and transfer of digital data between users, based on a blockchain-like protocol, and to a computer-implemented method employing said computer system.

Abstract: A showerhead for vacuum deposition of several species, the showerhead being divided into several quarters containing each at least one outlet for the species, each of the quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species. A process for vacuum deposition of one or more species onto a substrate, including providing a substrate for thin film growth in a growth chamber, providing two or more species to be effused towards the substrate, effusing the two or more species towards the substrate with line of sight propagation and in high vacuum conditions, and obtaining a thin film with gradients of chemical elements composition, morphology or crystalline phase.

Abstract: A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature.

Abstract: A showerhead for vacuum deposition of several species, the showerhead being divided into several quarters containing each at least one outlet for the species, each of the quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species. A process for vacuum deposition of one or more species onto a substrate, including providing a substrate for thin film growth in a growth chamber, providing two or more species to be effused towards the substrate, effusing the two or more species towards the substrate with line of sight propagation and in high vacuum conditions, and obtaining a thin film with gradients of chemical elements composition, morphology or crystalline phase.

Abstract: A showerhead for vacuum deposition of several species, the showerhead being divided into several quarters containing each at least one outlet for the species, each quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contain different species.

Abstract: A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature.

Abstract: A showerhead for vacuum deposition of several species, the showerhead being divided into several quarters containing each at least one outlet for the species, each quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contain different species.

Abstract: A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: A showerhead for vacuum deposition of several species, said showerhead being divided into several quarters containing each at least one outlet for said species, each of said quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.