Abstract: An apparatus for sampling and detecting a pathogen in air comprising a first air sampling module, a second module for the isolation of viral RNA and a third module for amplification and detection of the viral RNA; thanks to the integration between the modules the apparatus is compact and portable and can be used for in situ sampling of air in closed environments such as ambulances or hospital rooms, air in the external environment and air exhaled by patients.

Abstract: A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layer.

Abstract: Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its alloys with carbon. The device is able to absorb a large quantity of UV radiation and to convert it into electric current being transparent to photons of longer wavelengths. Its deposition technique allows fabrication on substrates of glass, plastic, metal, ceramic types of materials (also opaque, also flexible), on which a conductor material film has been predeposited. It can be fabricated on substrates of any size.

Abstract: Variable spectrum photodetector allowing the detection of the three main colors of the visible spectrum (red, green and blue) by varying the bias voltage by a few volts around zero. It is built using known thin-film technology and is externally connected by means of two electrical terminals, thus rendering the realization of integrated 2D matrices extremely easy. It is especially applied to the manufacture of TV cameras, fax machines, etc. and of all systems requiring images reconstruction, its structure consisting of a specific overlaying of thin films, preferably of hydrogenated amorphous silicon (a-Si:H) and of its silicon-carbon alloys (a-SiC:H) and silicon-germanium (a-SiGe:H) placed by "Glow Discharge" technique. The invention can be applied to big dimensions structures. Advantages essentially are electrical simplicity and, consequently, it has more maintainability.