Patents by Inventor Gianlorenzo Masini

Gianlorenzo Masini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220244459
    Abstract: A method includes providing a photonic wafer that includes an electrical layer and a layer disposed on a substrate. The layer includes at least one optical waveguide that is disposed between the electrical layer and the substrate. The method also includes removing a portion of the substrate underneath the at least one optical waveguide and forming an end-face coupler. A portion of the end-face coupler is within the removed portion of the substrate. The end-face coupler transmits an optical signal to, or receives an optical signal from, an external optical device.
    Type: Application
    Filed: January 29, 2021
    Publication date: August 4, 2022
    Inventors: Roman BRUCK, Gianlorenzo MASINI
  • Publication number: 20220128761
    Abstract: Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Inventors: Subal SAHNI, Kamal V. KARIMANAL, Gianlorenzo MASINI, Attila MEKIS, Roman BRUCK
  • Publication number: 20220019121
    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
    Type: Application
    Filed: July 26, 2021
    Publication date: January 20, 2022
    Inventors: Attila Mekis, Subal Sahni, Yannick De Koninck, Gianlorenzo Masini, Faezeh Gholami
  • Patent number: 11217710
    Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: January 4, 2022
    Assignee: Luxtera LLC
    Inventors: Kam-Yan Hon, Gianlorenzo Masini, Subal Sahni
  • Publication number: 20210356775
    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.
    Type: Application
    Filed: July 30, 2021
    Publication date: November 18, 2021
    Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
  • Publication number: 20210313306
    Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Inventors: Kam-Yan HON, Subal SAHNI, Gianlorenzo MASINI, Attila MEKIS
  • Patent number: 11106061
    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: August 31, 2021
    Assignee: Luxtera LLC
    Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini
  • Patent number: 11101400
    Abstract: Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: August 24, 2021
    Assignee: Luxtera LLC
    Inventors: Gianlorenzo Masini, Kam-Yan Hon, Subal Sahni, Attila Mekis
  • Patent number: 11073737
    Abstract: Methods and systems for an all-optical wafer acceptance test may include an optical transceiver on a chip, the optical transceiver comprising first, second, and third grating couplers, an interferometer comprising first and second phase modulators, a splitter, and a plurality of photodiodes. A first input optical signal may be received in the chip via the first grating coupler, where the first input optical signal may be coupled to the interferometer. An output optical signal may be coupled out of the chip via the second grating coupler for a first measurement of the interferometer. A second input optical signal may be coupled to a third grating coupler and a portion of the second input optical signal may be communicated to each of the plurality of photodiodes via the splitter. A voltage may be generated using the photodiodes based on the second input signal that may bias the first phase modulator.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: July 27, 2021
    Assignee: Luxtera LLC
    Inventors: Gianlorenzo Masini, Roman Bruck, Kam-Yan Hon, Attila Mekis
  • Patent number: 11073738
    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: July 27, 2021
    Assignee: Luxtera LLC
    Inventors: Attila Mekis, Subal Sahni, Yannick De Koninck, Gianlorenzo Masini, Faezeh Gholami
  • Patent number: 11049851
    Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: June 29, 2021
    Assignee: Luxtera LLC
    Inventors: Kam-Yan Hon, Subal Sahni, Gianlorenzo Masini, Attila Mekis
  • Publication number: 20210175979
    Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an optical communication system including a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between first and second reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.
    Type: Application
    Filed: November 30, 2020
    Publication date: June 10, 2021
    Inventors: Peter DE DOBBELAERE, Attila MEKIS, Gianlorenzo MASINI
  • Patent number: 11022756
    Abstract: Near normal incidence MUX/DEMUX designs may include an optical demultiplexer coupled to a photonics die, where the optical demultiplexer comprises an input fiber, thin film filters at a first surface of a substrate, a first mirror at the first surface of the substrate, and a second mirror at a second surface of the substrate. The optical demultiplexer may receive an input optical signal comprising a plurality of wavelength optical signals, reflect the input optical signal from the first mirror to the second mirror, reflect the input optical signal from the second mirror to a first of the thin film filters, communicate an optical signal at a first wavelength to the photonics die while reflecting others to the second mirror, reflect the other signals to a second of the plurality of thin film filters, and communicate an optical signal at a second wavelength to the photonics die.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: June 1, 2021
    Assignee: Luxtera LLC
    Inventors: Shawn Wang, Subal Sahni, Gianlorenzo Masini
  • Patent number: 10901244
    Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: January 26, 2021
    Assignee: Luxtera LLC
    Inventors: Ali Ayazi, Gianlorenzo Masini, Subal Sahni, Attila Mekis, Thierry Pinguet
  • Patent number: 10879648
    Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an optical communication system including a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between first and second reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: December 29, 2020
    Assignee: Luxtera LLC
    Inventors: Peter De Dobbelaere, Attila Mekis, Gianlorenzo Masini
  • Patent number: 10866482
    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 15, 2020
    Assignee: Luxtera LLC
    Inventors: Attila Mekis, Subal Sahni, Yannick De Koninck, Gianlorenzo Masini, Faezeh Gholami
  • Patent number: 10855378
    Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: December 1, 2020
    Assignee: Luxtera LLC
    Inventors: Subal Sahni, Kam-Yan Hon, Attila Mekis, Gianlorenzo Masini, Lieven Verslegers
  • Patent number: 10848246
    Abstract: Methods and systems for an optical connection service interface may include, in an optical data link comprising an optical fiber coupling first and second transceivers, generating a signal for the transceivers at a low frequency, and communicating, utilizing the optical fiber, an optical data signal at a high frequency and an Optical Connection Service interface (OCSi) signal at an intermediate frequency. An optical signal may be modulated at the intermediate frequencies for the OCSi, and may be modulated and communicated to the second transceiver. The communicated modulated signal and the optical data signal may be detected utilizing a photodetector in the second transceiver. The detected optical signal may be demodulated, and an optical power of the optical data signal may be configured based on the demodulated signal.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: November 24, 2020
    Assignee: Luxtera LLC
    Inventors: Gianlorenzo Masini, Joseph Balardeta, Scott Denton
  • Patent number: 10805010
    Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: October 13, 2020
    Assignee: Luxtera, LLC
    Inventors: Gianlorenzo Masini, Subal Sahni
  • Publication number: 20200292855
    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.
    Type: Application
    Filed: April 6, 2020
    Publication date: September 17, 2020
    Inventors: Ali Ayazi, Kam-Yan Hon, Gianlorenzo Masini