Patents by Inventor Gianluca Camuso

Gianluca Camuso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160260825
    Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla