Patents by Inventor Giao Quynh Bui-Le

Giao Quynh Bui-Le has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for etching an oxide layer
    Patent number: 6083844
    Abstract: A method for etching a substrate having thereon a silicon dioxide-containing layer disposed above a TiN layer is disclosed. The method includes positioning the substrate in the plasma processing chamber. There is also included flowing an etchant source gas that includes CO, CHF.sub.3, neon and N.sub.2 into the plasma processing chamber. Further, there is included forming a plasma out of the etchant source gas within the plasma processing chamber to cause etching of the silicon-dioxide-containing layer.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: July 4, 2000
    Assignee: Lam Research Corporation
    Inventors: Giao Quynh Bui-Le, John Arima