Abstract: The present invention provides systems and methods for determining the cleanliness of a sample, the method including impinging high pressure fluid pulses on a sample disposed in a chamber to liberate particles therefrom and quantifying a number of the liberated particles to determine the cleanliness of the sample.

Abstract: Determining cleanliness of a sample by providing a continuous flow of clean air into a chamber through a HEPA filter, taking a reference reading of particle counts while the chamber is empty, introducing the sample into the chamber and taking a first reading of a particle count received from all sides of the sample in the chamber to determine loose particles in a particle size range of 0.1 microns up to 5 microns associated with the sample.

Abstract: A method and apparatus for determining cleanliness of a sample is provided. The method includes taking a first reading of particles count of a sample placed into a chamber. The method further includes directing a stream of air over the sample, and taking a second reading of particles count of the sample. The method further includes calculating a difference between the first reading and the second reading, and determining a cleanliness of the sample based upon the difference. The method further includes option of taking an additional reading while a stream of ionized air is directed towards the sample. The method further includes trapping the impurities particles released from the sample by applying a vacuum through the filter, and analyzing the trapped particles to determine nature and chemical composition of the impurities particles.

Abstract: Determining cleanliness of a sample by providing a continuous flow of clean air into a chamber through a HEPA filter, taking a reference reading of particle counts while the chamber is empty, introducing the sample into the chamber and taking a first reading of a particle count received from all sides of the sample in the chamber to determine loose particles in a particle size range of 0.1 microns up to 5 microns associated with the sample.

Abstract: A method and apparatus for determining cleanliness of a sample is provided. The method includes taking a first reading of particles count of a sample placed into a chamber. The method further includes directing a stream of air over the sample, and taking a second reading of particles count of the sample. The method further includes calculating a difference between the first reading and the second reading, and determining a cleanliness of the sample based upon the difference. The method further includes option of taking an additional reading while a stream of ionized air is directed towards the sample. The method further includes trapping the impurities particles released from the sample by applying a vacuum through the filter, and analyzing the trapped particles to determine nature and chemical composition of the impurities particles.

Abstract: A system of golfing aids for a golfer for improving golf shots, the system comprising: an automatic activation switch for automatically activating at least one golfing aid when a golfer prepares to take a shot, and at least one automatically activated golfing aid.

Abstract: A compact torch for use in semiconductor processing which may be used both to produce steam and to perform wet or dry dichlorethylene (DCE) oxidation at varying concentrations with no reconfiguration of the torch, providing full temperature of control of the oxidation product gases, with redundancy to provide automatic backup of heating and ignition elements, and with non-mechanical flow control of the oxidation product gases.

Abstract: A furnace for processing semiconductor wafers including an insulating enclosure; a first heating apparatus disposed centrally with respect to the insulating enclosure; a frame operative to support a multiplicity of semiconductor wafers in a nearly vertical orientation in at least one right polyhedronal tier about and facing the first centrally disposed heating apparatus; a double-walled quartz enclosure for enclosing the wafers which is operative to enable the wafers to be processed in a predetermined controlled environment; and a second heating apparatus disposed between the quartz enclosure and the insulating enclosure arranged, together with the first heating apparatus, for substantially uniform heating of the wafers.

Abstract: A mask and an assembly utilizable in the production of a multiplicity of capacitors on selected regions of a semiconductor wafer includes a shaped, thin sheet of material having spaced-apart holes made therein and at least one recess formed adjacent each of at least two opposite edges thereof, the recess being configured to be engaged by a substantially matching portion of a clamp releasably affixing the mask onto the wafer.

Abstract: A fast, safe pyrogenic external torch assembly that provides pure steam for semiconductor processing in semiconductor processing furnaces includes a gas injection nozzle subassembly, a pulse heater subassembly and a compressed-air-cooled heat-exchanging jacket subassembly. The gas injection nozzle subassembly includes plural oxygen gas injection nozzles and a hydrogen gas injection nozzle that cooperate to provide a torch that is well-behaved over the practicable range of oxygen and hydrogen gas supply rates and ratios, that may be quickly ramped to any desired gas flow conditions and that is free from the possibility of unwanted explosion due to incomplete hydrogen gas consumption. The pulse heater subassembly includes one or more blackbodies and a radiant energy source that are cooperative to quickly and efficiently provide one or more hot spots at the industry safe-ignition temperature.