Patents by Inventor Gido Van Der Star
Gido Van Der Star has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150892Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.Type: ApplicationFiled: January 5, 2024Publication date: May 9, 2024Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
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Patent number: 11898243Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.Type: GrantFiled: December 7, 2020Date of Patent: February 13, 2024Assignee: ASM IP Holding B.V.Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
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Patent number: 11830730Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.Type: GrantFiled: August 29, 2017Date of Patent: November 28, 2023Assignee: ASM IP Holding B.V.Inventors: Arjen Klaver, Werner Knaepen, Lucian Jdira, Gido van der Star, Ruslan Kvetny
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Publication number: 20230335397Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: June 12, 2023Publication date: October 19, 2023Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido van Der Star, Toshiya Suzuki
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Patent number: 11694892Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 8, 2021Date of Patent: July 4, 2023Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido van Der Star, Toshiya Suzuki
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Publication number: 20210335595Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 8, 2021Publication date: October 28, 2021Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido van Der Star, Toshiya Suzuki
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Publication number: 20210332476Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.Type: ApplicationFiled: December 7, 2020Publication date: October 28, 2021Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
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Patent number: 11107676Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: March 23, 2020Date of Patent: August 31, 2021Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Patent number: 10741385Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 14, 2017Date of Patent: August 11, 2020Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20200227250Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: March 23, 2020Publication date: July 16, 2020Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20190295837Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 14, 2017Publication date: September 26, 2019Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20190066997Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.Type: ApplicationFiled: August 29, 2017Publication date: February 28, 2019Inventors: Arjen Klaver, Werner Knaepen, Lucian Jdira, Gido van der Star, Ruslan Kvetny
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Patent number: 9887082Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 28, 2016Date of Patent: February 6, 2018Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20180033606Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 28, 2016Publication date: February 1, 2018Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki