Abstract: An apparatus for interpolating between a first signal and a second signal is provided. The apparatus includes a first plurality of interpolation cells configured to generate a first interpolation signal at a first node. At least one of the first plurality of interpolation cells is configured to supply, based on a first number of bits of a control word, at least one of the first signal and the second signal to the first node. The apparatus further includes a second plurality of interpolation cells configured to generate a second interpolation signal at a second node. At least one of the second plurality of interpolation cells is configured to supply, based on a second number of bits of the control word, at least one of the first signal and the second signal to the second node.

Abstract: An apparatus for interpolating between a first signal and a second signal is provided. The apparatus includes a first plurality of interpolation cells configured to generate a first interpolation signal at a first node. At least one of the first plurality of interpolation cells is configured to supply, based on a first number of bits of a control word, at least one of the first signal and the second signal to the first node. The apparatus further includes a second plurality of interpolation cells configured to generate a second interpolation signal at a second node. At least one of the second plurality of interpolation cells is configured to supply, based on a second number of bits of the control word, at least one of the first signal and the second signal to the second node.

Abstract: This disclosure provides devices and methods for limiting the duration of pulses resulting from frequency modulation so as to provide for better propagation of a frequency doubler output within a communication device. The frequency doubler may be configured to receive a frequency doubler input and produce a modified frequency doubler output, wherein the frequency doubler includes a first flip-flop gate configured to receive a data input, a reset input, and a clock input and produce a first gate output; a first delay control configured to receive the gate output and produce a first delayed control output; and a first logic gate configured to receive the delayed control output and the frequency doubler input and produce a first logic gate output, wherein the modified frequency doubler output is based on the first logic gate output.

Abstract: A memory cell and a process for production thereof, the memory cell having a CMOS substrate having two adjacent wells of opposite conductivity types, having trench isolation between the wells, wherein one of the wells is connected to a ground voltage level and the other one to a constant voltage level; a shallow lightly doped n layer in a first one of the wells; a shallow lightly doped p layer in a second one of the wells; at least a first and second deep heavily doped p regions in the first well; at least a first and second deep heavily doped n regions in the second well; and a conductor to connect the first and second deep p regions, the shallow n region, the first and second deep n regions and the shallow p region to the same input voltage level relative to the ground voltage level.

Abstract: A memory cell and a process for production thereof, the memory cell having a CMOS substrate having two adjacent wells of opposite conductivity types, having trench isolation between the wells, wherein one of the wells is connected to a ground voltage level and the other one to a constant voltage level; a shallow lightly doped n layer in a first one of the wells; a shallow lightly doped p layer in a second one of the wells; at least a first and second deep heavily doped p regions in the first well; at least a first and second deep heavily doped n regions in the second well; and a conductor to connect the first and second deep p regions, the shallow n region, the first and second deep n regions and the shallow p region to the same input voltage level relative to the ground voltage level.

Abstract: A memory cell comprises asymmetric retention elements formed of bipolar junction transistors integrated with a CMOS transistor. The BJT transistors of the retention element may be vertically stacked. In one embodiment, the N region of two adjacent NPN BJT transistors may be connected to ground and may form a common emitter of the NPN BJT transistors while the P region of two adjacent PNP BJT transistors may be connected to high voltage and may form a common emitter of the PNP BJT transistors. For further compactness in one embodiment a base of one transistor doubles as a collector of another transistor. The retention element may have only a single bit line and a single write line, with no negative bit line. In some embodiments, a single inverter and only three transistors may form the retention element. Memory space may be cut approximately in half.

Abstract: A memory cell comprises asymmetric retention elements formed of bipolar junction transistors integrated with a CMOS transistor. The BJT transistors of the retention element may be vertically stacked. In one embodiment, the N region of two adjacent NPN BJT transistors may be connected to ground and may form a common emitter of the NPN BJT transistors while the P region of two adjacent PNP BJT transistors may be connected to high voltage and may form a common emitter of the PNP BJT transistors. For further compactness in one embodiment a base of one transistor doubles as a collector of another transistor. The retention element may have only a single bit line and a single write line, with no negative bit line. In some embodiments, a single inverter and only three transistors may form the retention element. Memory space may be cut approximately in half.

Abstract: A digitally controlled capacitor includes a first set of N capacitors, wherein the first set has a first capacitance value and each of the M capacitors has a second capacitance value, and at least one second set of N capacitors. The second set has the first capacitance value and each of the N capacitors has a third capacitance value that is greater than the second capacitance value. M and N are integers greater than one and M is not equal to N.

Abstract: A digitally controlled oscillator circuit is provided that comprises a ring oscillator including multiple inverters; multiple digitally controlled capacitors (DCCs), each coupled to apply a digitally controllable amount of capacitance to an output of a different one of the inverters; and control circuitry operable to change an amount of capacitance applied to each inverter during operation of the ring oscillator and to cause the multiple DCCs to apply substantially the same amounts of capacitance to each of the inverter throughout operation of the ring oscillator.

Abstract: Method of manufacturing and a transistor structure thereof comprising: a pair of spaced apart regions forming a source region and a drain region and defining at least part of a channel region there between, the source region and the drain region comprising a semiconductor heavily doped with n-type impurity element and said channel region comprising a semiconductor lightly doped with n-type impurity element; and a pair of gates each being insulated from the channel region by a respective gate insulating layer and being disposed substantially symmetrically along the channel region on opposite sides of thereof; whereby in use independent voltages may be applied to said gates so as to modify conductivity of the channel.

Abstract: High-gain synchronizer circuitry and methods are provided that reduce the meta-stable resolve time of a synchronizer circuit. The high-gain synchronizer is made up of high-gain latch circuits. The high-gain latch circuits are made up of a series of inverters that at least initially increase in size and that are connected in a closed loop. In accordance with the invention, the time that the high-gain synchronizer remains in the meta-stable state is minimized through the use of the high-gain latch circuits.