Patents by Inventor Gil Atar

Gil Atar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage fast-avalanche diode
    Patent number: 12068419
    Abstract: A method of using a diode device including providing a diode that includes an active region including a 525 micron thick. 10 k?-cm, n-type, float zone wafer, and operating the diode as a silicon-avalanche semiconductor switch.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: August 20, 2024
    Assignee: Soreq Nuclear Research Center
    Inventors: Amit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias
  • HIGH-VOLTAGE FAST-AVALANCHE DIODE
    Publication number: 20230040734
    Abstract: A high-voltage fast-avalanche diode, being a silicon-avalanche shaper or sharpener (SAS), has a thick active region above 300 microns in thickness.
    Type: Application
    Filed: October 21, 2020
    Publication date: February 9, 2023
    Applicant: Soreq Nuclear Research Center
    Inventors: Amit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias
  • Optical waveguide fabrication
    Patent number: 8844322
    Abstract: An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 ?m, and wherein the layer is sintered at a temperature range of 1500-1600 C. and subsequently heat treated by a laser.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: September 30, 2014
    Assignee: Soreq Nuclear Research Center
    Inventors: Gil Atar, Ariel Bruner, David Eger, Bruno Sfez
  • OPTICAL WAVEGUIDE FABRICATION
    Publication number: 20130209047
    Abstract: An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 ?m, and wherein the layer is sintered at a temperature range of 1500-1600 C and subsequently heat treated by a laser.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 15, 2013
    Inventors: Gil Atar, Ariel Bruner, David Eger, Bruno Sfez