Patents by Inventor Gil Han Park
Gil Han Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8754578Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: GrantFiled: May 29, 2012Date of Patent: June 17, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Grigory Onushkin, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Patent number: 8536026Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.Type: GrantFiled: July 3, 2007Date of Patent: September 17, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hee Seok Park, Gil Han Park, Sang Duk Yoo, Young Min Park, Hak Hwan Kim, Seon Young Myoung, Sang Bum Lee, Ki Tae Park, Myoung Sik Jung, Kyeong Ik Min
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Patent number: 8339050Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.Type: GrantFiled: August 12, 2011Date of Patent: December 25, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Young Jin Lee, Byoung Own Min, Gil Han Park, Grigory Onushkin
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Publication number: 20120235584Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: ApplicationFiled: May 29, 2012Publication date: September 20, 2012Applicant: Samsung LED Co., Ltd.Inventors: Grigory ONUSHKIN, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Patent number: 8188654Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: GrantFiled: September 20, 2011Date of Patent: May 29, 2012Assignee: Samsung LED Co., Ltd.Inventors: Grigory Onushkin, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Patent number: 8130432Abstract: Provided is a space scanner for a self-control moving object. The space scanner has a structure in which a reflective mirror is rotated and tilted. Thus, the space scanner can scan a moving object in horizontal and vertical directions to secure spatial-data, thereby performing a self-control movement.Type: GrantFiled: June 16, 2009Date of Patent: March 6, 2012Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Back Kue Lee, Gil Han Park, Hong Ki Kim
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Publication number: 20120007499Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: ApplicationFiled: September 20, 2011Publication date: January 12, 2012Applicant: Samsung LED Co., Ltd.Inventors: Grigory ONUSHKIN, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Publication number: 20110300652Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.Type: ApplicationFiled: August 16, 2011Publication date: December 8, 2011Applicant: Samsung LED Co., Ltd.Inventors: Seong Eun Park, Bang Won OH, Gil Han Park, Min Ho Kim, Rak Jun Choi, Young Min Park, Hee Seok Park
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Publication number: 20110298382Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.Type: ApplicationFiled: August 12, 2011Publication date: December 8, 2011Applicant: Samsung LED Co., Ltd.Inventors: Young Jin LEE, Byoung Own Min, Gil Han Park, Grigory Onushkin
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Patent number: 8072665Abstract: A three-dimensional space scanner is configured so that a reflecting mirror is rotated and tilted so as to scan a mobile object in a horizontal as well as vertical direction, thereby obtaining spatial data.Type: GrantFiled: September 17, 2009Date of Patent: December 6, 2011Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Back Kue Lee, Gil Han Park, Hong Ki Kim, Kwang Youel Raa
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Patent number: 8040050Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: GrantFiled: November 5, 2008Date of Patent: October 18, 2011Assignee: Samsung LED Co., Ltd.Inventors: Grigory Onushkin, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Patent number: 8026675Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.Type: GrantFiled: June 20, 2008Date of Patent: September 27, 2011Assignee: Samsung LED Co., Ltd.Inventors: Young Jin Lee, Byoung Own Min, Gil Han Park, Grigory Onushkin
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Publication number: 20100118362Abstract: A three-dimensional space scanner is configured so that a reflecting mirror is rotated and tilted so as to scan a mobile object in a horizontal as well as vertical direction, thereby obtaining spatial data.Type: ApplicationFiled: September 17, 2009Publication date: May 13, 2010Inventors: Back Kue LEE, Gil Han PARK, Hong-Ki KIM, Kwang Youel RAA
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Publication number: 20100027088Abstract: Provided is a space scanner for a self-control moving object. The space scanner has a structure in which a reflective mirror is rotated and tilted. Thus, the space scanner can scan a moving object in horizontal and vertical directions to secure spatial-data, thereby performing a self-control movement.Type: ApplicationFiled: June 16, 2009Publication date: February 4, 2010Inventors: Back Kue Lee, Gil Han Park, Hong Ki Kim
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Publication number: 20090322241Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.Type: ApplicationFiled: November 5, 2008Publication date: December 31, 2009Inventors: Grigory Onushkin, Gil Han Park, Jung Ja Yang, Young Jin Lee
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Publication number: 20080315789Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.Type: ApplicationFiled: June 20, 2008Publication date: December 25, 2008Inventors: Young Jin Lee, Byoung Own Min, Gil Han Park, Grigory Onushkin
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Publication number: 20080099781Abstract: A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.Type: ApplicationFiled: September 18, 2007Publication date: May 1, 2008Inventors: Rak Jun Choi, Kureshov Vladimir, Bang Won Oh, Gil Han Park, Hee Seok Park, Seong Eun Park, Young Min Park, Min Ho Kim
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Publication number: 20080087907Abstract: A light emitting diode package including: a package substrate having a mounting area and first and second wiring structures partially exposed in the mounting area; a light emitting diode having first and second electrodes, the light emitting diode mounted on the mounting area of the package substrate to allow the first and second electrodes to be connected to first and second bonding pads, respectively; a transparent cover mounted above the mounting area of the package substrate to hermetically seal a mounting space in which the light emitting diode is mounted; and a transparent electric insulation fluid filled in the mounting space of the hermetically sealed light emitting diode and having a refractive index smaller than a refractive index of a material forming the light emitting diode.Type: ApplicationFiled: September 13, 2007Publication date: April 17, 2008Inventors: Hee Seok Park, Gil Han Park, Sang Duk Yoo, Ki Tae Park, Myoung Sik Jung, Kyeong Ik Min
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Publication number: 20080078986Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.Type: ApplicationFiled: September 21, 2007Publication date: April 3, 2008Inventors: Seong Eun Park, Bang Won Oh, Gil Han Park, Min Ho Kim, Rak Jun Choi, Young Min Park, Hee Seok Park
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Publication number: 20080035951Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.Type: ApplicationFiled: July 3, 2007Publication date: February 14, 2008Inventors: Hee Seok Park, Gil Han Park, Sang Duk Yoo, Young Min Park, Hak Hwan Kim, Seon Young Myoung, Sang Bum Lee, Ki Tae Park, Myoung Sik Jung, Kyeong Ik Min