Patents by Inventor GIL LOEWENTHAL

GIL LOEWENTHAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Layer detection for high aspect ratio etch control
    Patent number: 11929291
    Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: March 12, 2024
    Assignee: NOVA LTD.
    Inventors: Gil Loewenthal, Shay Yogev, Yoav Etzioni
  • LAYER DETECTION FOR HIGH ASPECT RATIO ETCH CONTROL
    Publication number: 20220044975
    Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.
    Type: Application
    Filed: August 23, 2021
    Publication date: February 10, 2022
    Applicant: NOVA LTD.
    Inventors: Gil Loewenthal, Shay Yogev, Yoav Etzioni
  • Layer detection for high aspect ratio etch control
    Patent number: 11107738
    Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi -layered structure.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: August 31, 2021
    Assignee: Nova Ltd.
    Inventors: Gil Loewenthal, Shay Yogev, Yoav Etzioni
  • LAYER DETECTION FOR HIGH ASPECT RATIO ETCH CONTROL
    Publication number: 20200194320
    Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi -layered structure.
    Type: Application
    Filed: November 16, 2017
    Publication date: June 18, 2020
    Inventors: GIL LOEWENTHAL, SHAY YOGEV, YOAV ETZIONI