Patents by Inventor Gil Markovich

Gil Markovich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11240917
    Abstract: Provided is a novel printing process for fabricating metallic, conductive and transparent ultra-thin nanowires and patterns including same on a substrate. The process includes two different controllable steps, each designed to achieving a useful and efficient pattern.
    Type: Grant
    Filed: April 2, 2017
    Date of Patent: February 1, 2022
    Assignee: TECHNOLOGY INNOVATION MOMENTUM FUND (ISRAEL) LIMITED PARTNERSHIP
    Inventors: Gil Markovich, Einat Tirosh, Muriel Tzadka
  • Patent number: 11062902
    Abstract: A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: July 13, 2021
    Assignee: Ramot at Tel-Aviv University Ltd.
    Inventors: Yoram Dagan, Gil Markovich, Alon Ron, Amir Hevroni
  • Patent number: 10816614
    Abstract: A magnetic field sensor system comprises an electrically conducting film of ferromagnetic nanoparticles printed directly on a supporting structure, and electrically conducting contacts coupled to the film for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current in a direction that is generally perpendicular to the current direction in the plane of the film.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: October 27, 2020
    Assignee: Ramot at Tel-Aviv University Ltd.
    Inventors: Alexander Gerber, Gil Markovich, Leah Ben Gur, Einat Tirosh
  • Publication number: 20190273012
    Abstract: A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
    Type: Application
    Filed: August 16, 2017
    Publication date: September 5, 2019
    Applicant: Ramot at Tel-Aviv University Ltd
    Inventors: Yoram DAGAN, Gil MARKOVICH, Alon RON, Amir HEVRONI
  • Patent number: 10403414
    Abstract: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires by surfactant/template assisted method which involves the use of a precursor solution based on surfactant (such as CTAB), metal precursor (such as HAuCl4 and AgNO3) and reducing agent (such as metal borohydride or sodium ascorbate).
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: September 3, 2019
    Assignees: RAMOT AT TEL-AVIV UNIVERSITY LTD., P.V. NANO CELL LTD.
    Inventors: Gil Markovich, Daniel Azulai, Tatyana Levi-Belenkova, Hagit Gilon, Fernando De La Vega, Ayala Kabla
  • Publication number: 20190166699
    Abstract: Provided is a novel printing process for fabricating metallic, conductive and transparent ultra-thin nanowires and patterns including same on a substrate. The process includes two different controllable steps, each designed to achieving a useful and efficient pattern.
    Type: Application
    Filed: April 2, 2017
    Publication date: May 30, 2019
    Applicant: TECHNOLOGY INNOVATION MOMENTUM FUND (ISRAEL) LIMITED PARTNERSHIP
    Inventors: Gil MARKOVICH, Einat TIROSH, Muriel TZADKA
  • Patent number: 10237974
    Abstract: A conductive nanowire film having a high aspect-ratio metal is described. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: March 19, 2019
    Assignee: RAMOT AT TEL-AVIV UNIVERSITY LTD. ISRAELI COMPANY OF
    Inventors: Gil Markovich, Daniel Azulai, Olga Krichevski
  • Publication number: 20190041472
    Abstract: A magnetic field sensor system comprises an electrically conducting film of ferromagnetic nanoparticles printed directly on a supporting structure, and electrically conducting contacts coupled to the film for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current in a direction that is generally perpendicular to the current direction in the plane of the film.
    Type: Application
    Filed: February 14, 2017
    Publication date: February 7, 2019
    Inventors: Alexander GERBER, Gil MARKOVICH, Leah BEN GUR, Einat TIROSH
  • Publication number: 20170127515
    Abstract: A conductive nanowire film having a high aspect-ratio metal is described. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.
    Type: Application
    Filed: January 6, 2017
    Publication date: May 4, 2017
    Inventors: Gil MARKOVICH, Daniel AZULAI, Olga KRICHEVSKI
  • Patent number: 9574272
    Abstract: A conductive nanowire film based on a high aspect-ratio metal is disclosed. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: February 21, 2017
    Assignee: RAMOT AT TEL-AVIV UNIVERSITY LTD
    Inventors: Gil Markovich, Daniel Azulai, Olga Krichevski
  • Publication number: 20160268013
    Abstract: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires by surfactant/template assisted method which involves the use of a precursor solution based on surfactant (such as CTAB), metal precursor (such as HAuCl4 and AgN03) and reducing agent (such as metal borohydride or sodium ascorbate).
    Type: Application
    Filed: May 23, 2016
    Publication date: September 15, 2016
    Inventors: Gil MARKOVICH, Daniel AZULAI, Tatyana LEVI-BELENKOVA, Hagit GILON, Fernando DE LA VEGA, Ayala KABLA
  • Patent number: 9373515
    Abstract: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires by surfactant/template assisted method which involves the use of a precursor solution based on surfactant (such as CTAB), metal precursor (such as HAuC14 and AgN03) and reducing agent (such as metal borohydride or sodium ascorbate).
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 21, 2016
    Assignees: RAMOT AT TEL-AVIV UNIVERSITY LTD, P.V. NANO CELL LTD.
    Inventors: Gil Markovich, Daniel Azulai, Tatyana Levi-Belenkova, Hagit Gilon, Fernando De La Vega, Ayala Kabla
  • Publication number: 20150104936
    Abstract: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires by surfactant/template assisted method which involves the use of a precursor solution based on surfactant (such as CTAB), metal precursor (such as HAuC14 and AgN03) and reducing agent (such as metal borohydride or sodium ascorbate).
    Type: Application
    Filed: February 28, 2013
    Publication date: April 16, 2015
    Inventors: Gil Markovich, Daniel Azulai, Tatyana Levi-Belenkova, Hagit Gilon, Fernando De La Vega, Ayala Kabla
  • Publication number: 20110162870
    Abstract: A conductive nanowire film based on a high aspect-ratio metal is disclosed. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.
    Type: Application
    Filed: September 1, 2009
    Publication date: July 7, 2011
    Applicant: RAMOT AT TEL-AVIV UNIVERSITY LTD
    Inventors: Gil Markovich, Daniel Azulai, Olga Krichevski
  • Patent number: 6159620
    Abstract: A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: December 12, 2000
    Assignee: The Regents of the University of California
    Inventors: James R. Heath, Daniel V. Leff, Gil Markovich